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Method of forming a metal trace with reduced RF impedance resulting from the skin effect

  • US 7,309,639 B1
  • Filed: 04/08/2004
  • Issued: 12/18/2007
  • Est. Priority Date: 08/15/2002
  • Status: Expired due to Term
First Claim
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1. A method of forming a semiconductor device, the method comprising:

  • forming a layer of insulation material over a semiconductor substrate, the layer of insulation material having a first opening that defines a first side wall and an opposing second side wall;

    forming a first layer of conductive material on the layer of insulation material to contact the first opening;

    etching the first layer of conductive material to form a first conductive spacer that adjoins the first side wall and the second side wall, and a second opening;

    forming a first layer of isolation material on the layer of insulation material and the first conductive spacer to contact the second opening;

    etching the first layer of isolation material to form a first isolation spacer that adjoins the first conductive spacer, and a third opening;

    forming a second layer of conductive material on the layer of insulation material to contact the third opening;

    etching the second layer of conductive material to form a second conductive spacer that adjoins the first isolation spacer, and a fourth opening;

    forming a second layer of isolation material on the layer of insulation material and the second conductive spacer to contact the fourth opening, andforming a conductive region on the first conductive spacer and the first layer of isolation material, the conductive region contacting the first and second conductive spacers to make an electrical connection.

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