×

Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same

  • US 7,309,883 B2
  • Filed: 04/01/2004
  • Issued: 12/18/2007
  • Est. Priority Date: 05/02/2003
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first well connected to a pad to which an external pin is connected, the first well including a first-type diffusion region connected to a bias voltage terminal;

    a second well adjacent to the first well, the second well including an insulating region having a first-type diffusion region and at least one second-type diffusion region outside the insulating region, wherein the at least one second-type diffusion region of the second well is connected to a first voltage terminal, and wherein the first-type diffusion region of the insulating region is connected to a second voltage terminal; and

    a third well adjacent to the second well and including a first-type diffusion region connected to the first voltage terminal,wherein the insulating region inside the second well, the at least one second-type diffusion region of the second well, and the first-type diffusion region of the first well, constitute a bipolar junction transistor which operates in a cut-off mode to cut off current from flowing from the first well to the third well when a control voltage is applied to the second voltage terminal.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×