Program-verify method of non-volatile memory device
First Claim
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1. A method for programming a non-volatile memory device including a plurality of memory cells, the method comprising:
- (a) applying a first voltage to a first word line to program a plurality of memory cells associated with the first word line, the first word line being one of word lines in a word line switching unit that is coupled to a memory cell block, the word line switching unit having N word lines, each word line being associated with a plurality of memory cells;
(b) determining whether or not the first word line is an Nth word line in the word line switching unit, the Nth word line being a word line that is provided closest to a drain select line;
(c) if the first word line is determined not to be the Nth word line, applying a first program-verify voltage to the first word line to determine whether or not the programming has been successful;
(d) if the programming is determined to have been successful in the step (c), applying the first voltage to a second word line in the word line switching unit to program a plurality of memory cells associated with the second word line; and
(e) if the first word line is determined to be the Nth word line in the step (b), applying a second program-verify voltage to the first word line to determine whether or not the programming has been successful.
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Abstract
A method for programming a non-volatile memory device includes applying a first program-verify voltage to a first word line to determine whether or not memory cells associated with the first word line have been programmed successfully. A second program-verify voltage is applied to a second word line to determine whether or not memory cells associated with the second word line have been programmed successfully. The second program-verify voltage is different from the first program-verify voltage. The first and second word lines are associated with the same word line switching unit.
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18 Claims
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1. A method for programming a non-volatile memory device including a plurality of memory cells, the method comprising:
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(a) applying a first voltage to a first word line to program a plurality of memory cells associated with the first word line, the first word line being one of word lines in a word line switching unit that is coupled to a memory cell block, the word line switching unit having N word lines, each word line being associated with a plurality of memory cells; (b) determining whether or not the first word line is an Nth word line in the word line switching unit, the Nth word line being a word line that is provided closest to a drain select line; (c) if the first word line is determined not to be the Nth word line, applying a first program-verify voltage to the first word line to determine whether or not the programming has been successful; (d) if the programming is determined to have been successful in the step (c), applying the first voltage to a second word line in the word line switching unit to program a plurality of memory cells associated with the second word line; and (e) if the first word line is determined to be the Nth word line in the step (b), applying a second program-verify voltage to the first word line to determine whether or not the programming has been successful. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for programming a non-volatile memory device, the method comprising:
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applying a first program-verify voltage to a first word line to determine whether or not memory cells associated with the first word line have been programmed successfully; and applying a second program-verify voltage to a second word line to determine whether or not memory cells associated with the second word line have been programmed successfully, the second program-verify voltage being different from the first program-verify voltage, wherein the first and second word lines are associated with the same word line switching unit. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification