×

Program-verify method of non-volatile memory device

  • US 7,310,271 B2
  • Filed: 04/07/2006
  • Issued: 12/18/2007
  • Est. Priority Date: 04/11/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method for programming a non-volatile memory device including a plurality of memory cells, the method comprising:

  • (a) applying a first voltage to a first word line to program a plurality of memory cells associated with the first word line, the first word line being one of word lines in a word line switching unit that is coupled to a memory cell block, the word line switching unit having N word lines, each word line being associated with a plurality of memory cells;

    (b) determining whether or not the first word line is an Nth word line in the word line switching unit, the Nth word line being a word line that is provided closest to a drain select line;

    (c) if the first word line is determined not to be the Nth word line, applying a first program-verify voltage to the first word line to determine whether or not the programming has been successful;

    (d) if the programming is determined to have been successful in the step (c), applying the first voltage to a second word line in the word line switching unit to program a plurality of memory cells associated with the second word line; and

    (e) if the first word line is determined to be the Nth word line in the step (b), applying a second program-verify voltage to the first word line to determine whether or not the programming has been successful.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×