System for performing data pattern sensitivity compensation using different voltage
First Claim
1. A non-volatile storage system, comprising:
- a group of connected non-volatile storage elements; and
a managing circuit in communication with said group of connected non-volatile storage elements, said managing circuit applies a particular voltage to a particular non-volatile storage element of said group, while applying said particular voltage said managing circuit applies a first voltage to a first set of one or more non-volatile storage elements of said group and a second voltage to a second set of one or more non-volatile storage elements of said group, said first set of one or more non-volatile storage elements are on a first side of said particular non-volatile storage element and have already been subjected to one or more programming processes since a last erase of said group, said second set of one or more non-volatile storage elements are on a second side of said particular non-volatile storage element and have not already been subjected to a programming processes since said last erase of said group, while applying said particular voltage said managing circuit applies a voltage that is different than said second voltage to a neighbor non-volatile storage element of said group, said neighbor non-volatile storage element is next to said particular non-volatile storage element on said second side of said particular non-volatile storage element, said neighbor of said particular non-volatile storage element has not been subjected to programming since erasing said group, said managing circuit verifies programming of said particular non-volatile storage element based on said particular voltage.
3 Assignments
0 Petitions
Accused Products
Abstract
Errors can occur when reading the threshold voltage of a programmed non-volatile storage element due to at least two mechanisms: (1) capacitive coupling between neighboring floating gates and (2) changing conductivity of the channel area after programming (referred to as back pattern effect). To account for coupling between neighboring floating gates, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell. To account for the back pattern effect, a first voltage is used during a verify operation for unselected word lines that have been subjected to a programming operation and a second voltage is used for unselected word lines that have not been subjected to a programming operation. The combination of these two techniques provides for more accurate storage and retrieval of data.
179 Citations
9 Claims
-
1. A non-volatile storage system, comprising:
-
a group of connected non-volatile storage elements; and a managing circuit in communication with said group of connected non-volatile storage elements, said managing circuit applies a particular voltage to a particular non-volatile storage element of said group, while applying said particular voltage said managing circuit applies a first voltage to a first set of one or more non-volatile storage elements of said group and a second voltage to a second set of one or more non-volatile storage elements of said group, said first set of one or more non-volatile storage elements are on a first side of said particular non-volatile storage element and have already been subjected to one or more programming processes since a last erase of said group, said second set of one or more non-volatile storage elements are on a second side of said particular non-volatile storage element and have not already been subjected to a programming processes since said last erase of said group, while applying said particular voltage said managing circuit applies a voltage that is different than said second voltage to a neighbor non-volatile storage element of said group, said neighbor non-volatile storage element is next to said particular non-volatile storage element on said second side of said particular non-volatile storage element, said neighbor of said particular non-volatile storage element has not been subjected to programming since erasing said group, said managing circuit verifies programming of said particular non-volatile storage element based on said particular voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification