Photonic bandgap modulator, amplifier, demux, and TDM devices

• US 7,310,454 B2
• Filed: 05/24/2004
• Issued: 12/18/2007
• Est. Priority Date: 05/24/2004
• Status: Expired due to Fees

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Akiyama, Shoji, Kimerling, Lionel C., Wada, Kazumi
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): LEPISTO, RYAN A
• Application Number:
  US10/852,386
• Publication Number:
  US 20050259922A1
• Time in Patent Office: 1,303 Days
• Field of Search: 385/2, 385 8- 10, 385 15- 24, 385/31, 385/40, 385 49- 50, 25022712-22717, 359/237, 359245-248, 359/250, 359259-260, 359263-264
• US Class Current: 385/9
• CPC Class Codes: G02F 1/21 by interference
• CPC Class Codes: G02F 1/213 Fabry-Perot type
• CPC Class Codes: G02F 1/3136 of interferometric switch type
• CPC Class Codes: G02F 2202/32 Photonic crystals

Abstract

An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.

Claims

1. An optical device comprising:

at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low refractive index materials; and

a defect region comprising doped Er formed in a cavity region between said at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by said optical device by applying a bias to said defect region to shift a defect mode by changing the refractive index of said defect region;

wherein said defect region comprises a thickness of λ

/2n, where n is the refractive index of said defect region and λ

is the wavelength of a signal entering said optical device having a Q of at least 1,000.

2. The optical device of claim 1, wherein said optical device is a modulator.

3. The optical device of claim 2, wherein said at least two PBG stacks each comprise three sets of said alternating layers of high and low refractive index materials.

4. The optical device of claim 1, wherein said high and low index layers comprise a thickness of λ

/4n₁, wherein λ

is the wavelength of a signal entering said optical device and n₁ is the optical refractive index of said layers.

5. The optical device of claim 1, wherein said optical device is an optical amplifier.

6. The optical device of claim 5, wherein said defect region comprises Erbium.

7. The optical device of claim 1, wherein said high refractive index materials comprise Si, SiN, or SiON.

8. The optical device of claim 1, wherein said low refractive index materials comprise SiO₂.

9. A method of forming an optical device comprising:

forming at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low refractive index materials; and

forming a defect region comprising doped Er in a cavity region between said at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by said optical device by applying a bias to said defect region to shift a defect mode by changing the refractive index of said defect region wherein said defect region comprises a thickness of λ

/2n, where n is the refractive index of said defect region and λ

is the wavelength of a signal entering said optical device having a Q of at least 1,000.

10. The method of claim 9, wherein said optical device is a modulator.

11. The method of claim 10, wherein said at least two PBG stacks each comprise three sets of said alternating layers of high and low refractive index materials.

12. The method of claim 9, wherein said high and low index layers comprise a thickness of λ

/4n₁, wherein λ

is the wavelength of a signal entering said optical device and n₁ is the optical refractive index of said layers.

13. The method of claim 9, wherein said optical device is an optical amplifier.

14. The method of claim 13, wherein said defect region comprises Erbium.

15. The method of claim 9, wherein said high refractive index materials comprise Si, SiN, or SiON.

16. The method of claim 9, wherein said low refractive index materials comprise SiO₂.