Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

• US 7,311,008 B2
• Filed: 02/15/2005
• Issued: 12/25/2007
• Est. Priority Date: 05/28/2004
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Zschech, Ehrenfried, Langer, Eckhard
• Primary Examiner(s): NOORI, MASOUD H
• Application Number:
  US11/058,706
• Publication Number:
  US 20050263760A1
• Time in Patent Office: 1,043 Days
• Field of Search: 737/77
• US Class Current: 73/777
• CPC Class Codes: G01L 5/0047 measuring forces due to residual stresses
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure. Additionally, the semiconductor structure may comprise an electrical element. The stress sensitive element and the electrical element comprise portions of a common layer structure. Analyzers may be adapted to determine a property of the stress sensitive element being representative of a stress in the semiconductor structure and a property of the electrical element. The property of the stress sensitive element may be determined and the manufacturing process may be modified based on the determined property of the stress sensitive element. The property of the electrical element may be related to the property of the stress sensitive element in order to investigate an influence of stress on the electrical element.

Claims

1. A method of investigating an influence of stress on an electrical element in a semiconductor structure, comprising:

forming a stress sensitive element in said semiconductor structure;

forming an electrical element in said semiconductor structure;

measuring a property of said stress sensitive element, said property being representative of an intrinsic stress condition in said semiconductor structure;

measuring a property of said electrical element; and

relating said property of said electrical element with said property of said stress sensitive element.

2. The method of claim 1, wherein forming said stress sensitive element comprises forming a line of a transparent material in said semiconductor structure.

3. The method of claim 2, wherein measuring said property of said stress sensitive element comprises measuring a wavelength of light reflected in said line of transparent material.

4. The method of claim 2, wherein measuring said property of said stress sensitive element comprises measuring an alteration of a length of an optical path in said line of transparent material.

5. The method of claim 1, wherein forming said stress sensitive element comprises forming an elastic element.

6. The method of claim 5, wherein forming said stress sensitive element comprises depositing a layer of a first material and a layer of a second material.

7. The method of claim 6, wherein forming said stress sensitive element comprises:

patterning said layer of said second material; and

exposing said semiconductor structure to an etchant, said etchant being adapted to selectively remove said first material.

8. The method of claim 5, wherein measuring said property of said stress sensitive element comprises determining a deflection of said elastic element.

9. The method of claim 8, wherein determining said deflection of said elastic element comprises analyzing a pattern of interference between light reflected from a surface of said elastic element and light reflected from a bottom surface.

10. The method of claim 8, wherein determining said deflection of said elastic element comprises analyzing a pattern of interference between light reflected from a surface of said elastic element and a reference light beam.

11. The method of claim 8, wherein determining said deflection of said elastic element comprises scanning a surface of said elastic element.

12. The method of claim 5, wherein measuring said property of said stress sensitive element comprises measuring a stiffness of said elastic element.

13. The method of claim 12, wherein measuring said stiffness of said elastic element comprises applying a force to said elastic element.

14. The method of claim 5, wherein measuring said property of said stress sensitive element comprises determining a spacing of features provided in said elastic element.

15. The method of claim 14, wherein determining said spacing comprises analyzing a light diffracted from said features.

16. The method of claim 1, wherein measuring the property of said electrical element further comprises measuring a resistivity of the electrical element.

17. The method of claim 1, wherein the electrical element comprises a transistor and measuring the property of said electrical element further comprises measuring a channel resistance of the electrical element.