Single scan irradiation for crystallization of thin films
First Claim
1. A system for processing a film on a substrate, comprising:
- a laser for generating a plurality of laser beam pulses having a repetition frequency;
a film support for positioning a film that is capable of movement in at least one direction;
a mask support for positioning a mask that is capable of movement in at least one direction;
optics for directing the plurality of laser beam pulses through a mask to generate patterned laser beams;
optics for directing the patterned beams onto a region of the film; and
a controller for controlling the movement of the film support and the mask support in conjunction with the frequency of the laser beam pulses, wherein the controller comprises computer-implemented instructions for executing the steps of;
positioning the film and the mask so as to irradiate a portion of a selected region of a film with one of the plurality of patterned laser beams; and
moving the film along a first translation pathway and moving the mask along a second translation pathway such that successive portions of the selected region are irradiated with patterned beams, and such that the selected region of the film is substantially completely crystallized in a single traversal of the patterned beams over the selected region of the film.
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Accused Products
Abstract
A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generate patterned laser beams; each of said beams having a length l′, a width w′ and a spacing between adjacent beams d′, irradiating a region of the film with the patterned beams, said beams having an intensity that is sufficient to melt an irradiated portion of the film to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating either the film or the mask, or both, a distance in the x- and y-directions, where the distance of translation in the y-direction is in the range of about 1′/n-δ, where δ is a value selected to form overlapping the beamlets from the one irradiation step to the next, and where the distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.
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Citations
27 Claims
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1. A system for processing a film on a substrate, comprising:
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a laser for generating a plurality of laser beam pulses having a repetition frequency; a film support for positioning a film that is capable of movement in at least one direction; a mask support for positioning a mask that is capable of movement in at least one direction; optics for directing the plurality of laser beam pulses through a mask to generate patterned laser beams; optics for directing the patterned beams onto a region of the film; and a controller for controlling the movement of the film support and the mask support in conjunction with the frequency of the laser beam pulses, wherein the controller comprises computer-implemented instructions for executing the steps of; positioning the film and the mask so as to irradiate a portion of a selected region of a film with one of the plurality of patterned laser beams; and moving the film along a first translation pathway and moving the mask along a second translation pathway such that successive portions of the selected region are irradiated with patterned beams, and such that the selected region of the film is substantially completely crystallized in a single traversal of the patterned beams over the selected region of the film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification