Copper barrier reflow process employing high speed optical annealing
First Claim
1. A method of forming a barrier layer for a thin film structure on a semiconductor substrate, said method comprising:
- forming high aspect ratio openings in a base layer having vertical side walls;
depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of said high aspect ratio openings including said vertical side walls;
depositing a metal barrier layer comprising said barrier metal on said first barrier layer; and
reflowing said metal barrier layer by;
(a) directing light from an array of continuous wave lasers into a line of light extending at least partially across said thin film structure,(b) translating said line of light relative to said thin film structure in a direction transverse to said line of light.
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Accused Products
Abstract
A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.
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Citations
21 Claims
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1. A method of forming a barrier layer for a thin film structure on a semiconductor substrate, said method comprising:
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forming high aspect ratio openings in a base layer having vertical side walls; depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of said high aspect ratio openings including said vertical side walls; depositing a metal barrier layer comprising said barrier metal on said first barrier layer; and reflowing said metal barrier layer by; (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across said thin film structure, (b) translating said line of light relative to said thin film structure in a direction transverse to said line of light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a barrier layer for a thin film structure on a semiconductor substrate, said method comprising:
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forming high aspect ratio openings in a base layer having vertical side walls; depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of said high aspect ratio openings including said vertical side walls; depositing a metal barrier layer comprising said barrier metal on said first barrier layer; depositing a metal seed layer of a main conductor metal species over said metal barrier layer; reflowing said metal seed layer by; (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across said thin film structure, (b) translating said line of light relative to said thin film structure in a direction transverse to said line of light. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification