Low temperature plasma deposition process for carbon layer deposition
First Claim
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1. A method of depositing a carbon layer on a workpiece, comprising:
- placing the workpiece in a reactor chamber;
introducing a carbon-containing process gas into the chamber;
generating a reentrant toroidal RF plasma current in a reentrant path that indludes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path;
coupling RF plasma bias power or bias voltage to the workpiece; and
enhancing optical absorption of the deposited carbon layer by heating the carbon layer following completion of its deposition.
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Abstract
A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
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Citations
19 Claims
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1. A method of depositing a carbon layer on a workpiece, comprising:
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placing the workpiece in a reactor chamber; introducing a carbon-containing process gas into the chamber; generating a reentrant toroidal RF plasma current in a reentrant path that indludes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path; coupling RF plasma bias power or bias voltage to the workpiece; and enhancing optical absorption of the deposited carbon layer by heating the carbon layer following completion of its deposition. - View Dependent Claims (2, 3, 8, 9, 10, 11, 12, 13, 14)
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4. A method of depositing a carbon layer on a workpiece, comprising:
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placing the workpiece in a reactor chamber; introducing a carbon-containing process gas into the chamber; generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path; coupling RF plasma bias power or bias voltage to the workpiece; and setting conductivity of the carbon layer between insulative and semiconductive by at least one of; (1) adjusting the ion bombardment energy at the wafer surface, (2) adjusting the workpiece temperature, (3) selecting the hydrogencarbon gas species of the process gas in accordance with a hydrogen-carbon ratio of the gas, (4) diluting the process gas with hydrogen, (5) diluting the process gas with an inert gas such as helium, neon, argon or xenon, (6) adjusting the flux of energetic ions at the wafer surface relative to the flux of carboncontaining radical species to the wafer surface, (7) adding to the process gas a precursor additive gas of one of;
(a) a semi-conductivity-enhancing species, (b) a resistivity-enhancing species;(8) implanting in the deposited carbon layer one of;
(a) a semiconductivity-enhancing species, (b) a resistivity-enhancing species. - View Dependent Claims (15)
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5. A method of depositing a carbon layer on a workpiece, comprising:
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placing the workpiece in a reactor chamber; introducing a carbon-containing process gas into the chamber; generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path; coupling RF plasma bias power or bias voltage to the workpiece; and setting the transparency or opacity of the carbon layer by at least one of; (1) adjusting the ion bombardment energy at the wafer surface, (2) adjusting the workpiece temperature, (3) selecting the hydrogencarbon gas species of the process gas in accordance with a hydrogen-carbon ratio of the gas, (4) diluting the process gas with hydrogen, (5) diluting the process gas with an inert gas such as helium, neon, argon or xenon, (6) adjusting the flux of energetic ions at the wafer surface relative to the flux of carbon-containing radical species to the wafer surface, (7) adding to the process gas a precursor additive gas of one of;
(a) an absorption-enhancing species, (b) a transparency-enhancing species;(8) implanting in the deposited carbon layer one of;
(a) an absorption-enhancing species, (b) a transparency-enhancing species. - View Dependent Claims (6, 7, 16)
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17. A method of depositing a carbon layer on a workpiece, comprising:
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placing the workpiece in a reactor chamber; introducing a carbon-containing process gas into the chamber ; generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path; coupling RF plasma bias power or bias voltage to the workpiece; and including a layer-enhancing additive gas that enhances thermal properties of the deposited carbon layer. - View Dependent Claims (18, 19)
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Specification