Three dimensional integrated circuit

• US 7,312,487 B2
• Filed: 08/16/2004
• Issued: 12/25/2007
• Est. Priority Date: 08/16/2004
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Elfadel, Ibrahim M., Rahman, Arifur, Kudva, Prabhakar N., Lavin, Mark A., Ieong, Meikei, Guarini, Kathryn W., Kung, David S., Alam, Syed M.
• Primary Examiner(s): Parker; Kenneth
• Assistant Examiner(s): Kraig; William F.
• Application Number:
  US10/919,121
• Publication Number:
  US 20060033110A1
• Time in Patent Office: 1,226 Days
• Field of Search: 257/74, 257/278, 257/773, 257/209, 257/E27.026, 257/E21.614, 257/E21.677, 257/E23.01, 257/E23.011, 257/E23.145, 326/41, 438/455, 438/458
• US Class Current: 257/278
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A three dimensional (3D) integrated circuit (IC), 3D IC chip and method of fabricating a 3D IC chip. The chip includes multiple layers of circuits, e.g., silicon insulator (SOI) CMOS IC layers, each including circuit elements. The layers may be formed in parallel and one layer attached to another to form a laminated 3D chip.

Claims

1. An integrated circuit (IC) chip comprising:

a substrate layer;

a first insulating layer on said substrate layer;

a first semiconductor layer on said first insulating layer, transistors being formed from said first semiconductor layer and connected together into circuit elements in a circuit layer;

a second insulating layer attached to said first semiconductor layer;

a second semiconductor layer on said second insulating layer, transistors being formed from said second semiconductor layer, and connected together into an array of circuit elements in a circuit layer, wherein a majority of IC chip elements are located on said first semiconductor layer; and

a plurality of interlayer connection channels, each interlayer connection channel having an end terminating on and extending from one of said circuit elements on said first semiconductor layer and said second semiconductor layer, ones of said circuit elements on said first semiconductor layer being connected through said plurality of interlayer connection channels to corresponding ones of said circuit elements on said second semiconductor layer, connection of said ones to said corresponding ones forming a three dimensional (3D) higher level circuit element within said IC;

wherein said circuit elements on said SOI CMOS circuit layer include combinational logic and said array of circuit elements is a CMOS driver grid, selected drivers of said CMOS driver grid being power up buffers for corresponding combinational logic gates on said SOI CMOS circuit layer.

2. An IC chip as in claim 1, wherein said first semiconductor layer is a silicon layer and said substrate layer, said first insulating layer and said silicon layer are layers in a silicon on insulator (SOI) CMOS circuit layer.

3. An IC chip as in claim 2, wherein said SOI CMOS circuit layer further comprises a wiring layer above said silicon layer, said transistors being connected together by wiring in said wiring layer and said IC further comprises a polymeric adhesive layer bonding said second insulating layer and said SOI CMOS circuit layer, said polymeric adhesive layer attaching said second semiconductor layer to said SOI CMOS circuit layer, said plurality of interlayer connection channels extending linearly between said ones and said corresponding ones.

4. An IC chip as in claim 2, further comprising a wiring layer disposed between said SOI CMOS circuit layer and said second semiconductor layer, another end of ones of said plurality of interlayer connections being connected to wires on said wiring layer.

5. An IC chip as in claim 4, wherein said second semiconductor layer includes a clock distribution for said SOI CMOS circuit layer.

6. An IC chip as in claim 5, wherein said clock distribution includes a plurality of CMOS clock drivers.

7. An IC as in claim 4, wherein said second insulator layer and said second semiconductor layer are layers in a second SOI CMOS circuit layer.

8. A CMOS integrated circuit (IC) chip comprising:

an SOI circuit layer comprising;

a semiconductor substrate layer;

an insulating layer on said substrate layer, and

a silicon layer on said insulating layer, Field Effect Transistors (FETs) being formed in said silicon layer and connected together into circuit elements in a circuit layer;

a second insulating layer attached to said SOI circuit layer;

a CMOS driver grid in a second silicon layer on said second insulating layer, wherein a majority of IC chip elements are located on said SOI circuit layer; and

a plurality of interlayer connection channels, each interlayer connection channel having an end terminating on and extending from one of said circuit elements in said SOI circuit layer and said second silicon layer, ones of said circuit elements on said SOI circuit layer being connected through said plurality of interlayer connection channels to corresponding ones of said array of circuit elements, connection of said ones to said corresponding ones forming a three dimensional (3D) higher level circuit element within said CMOS IC; and

wherein said circuit elements on said SOI circuit layer include combinational logic, selected drivers of said CMOS driver grid being power up buffers for corresponding combinational logic gates on said SOI CMOS circuit layer.

9. A CMOS IC chip as in claim 8, wherein said SOI circuit layer further comprises a wiring layer above said silicon layer, said FETs being connected together by wiring in said wiring layer and said IC further comprises a polymeric adhesive layer bonding said second insulating layer and said SOI circuit layer, said polymeric adhesive layer attaching said second silicon layer to said SOI circuit layer, said plurality of interlayer connection channels extending linearly between said ones and said corresponding ones.

10. A CMOS IC chip as in claim 8, further comprising a wiring layer attached between said SOI circuit layer and said second silicon layer, another end of ones of said plurality of interlayer connections being connected to wires on said wiring layer.

11. An integrated circuit (IC) comprising:

a plurality of circuit layers adhesively bonded to one another in a stack and including at least a first circuit layer and a second circuit layer of transistors connected together into circuit elements, wherein said first circuit layer is a silicon on insulator (SOI) CMOS circuit layer, said circuit elements on said SOI CMOS circuit layer comprise combinational logic said second circuit layer includes an array of active circuit elements and said array of active circuit elements is a CMOS driver grid, selected drivers of said driver grid being power up buffers for corresponding combinational logic gates on said SOI CMOS circuit layer;

a plurality of said circuit elements on said second circuit layer being disposed directly above a plurality of said circuit elements on first layer; and

a plurality of interlayer connection channels, each interlayer connection channel having an end terminating on one of said circuit elements on said first layer and said second layer, ones of said circuit elements on said first layer being connected through said plurality of interlayer connection channels to corresponding ones of said circuit elements on said second layer, connection of said ones to said corresponding ones forming a three dimensional (3D) higher level circuit element within said IC.