Semiconductor device with holding member
First Claim
Patent Images
1. A semiconductor device comprising;
- a semiconductor die;
a first insulation film disposed on a top surface of the semiconductor die;
a first wiring portion disposed on the first insulation film;
an inorganic holding substrate disposed over the top surface of the semiconductor die;
a separate resin layer attaching the holding substrate to the top surface of the semiconductor die;
a second insulation film comprising a side film and a back film, the side film being disposed on a side surface of the semiconductor die and the back film being disposed on a back surface of the semiconductor die;
a second wiring portion disposed on the side film and the back film and connected to the first wiring portion; and
a conductive terminal formed on the second wiring portion.
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Accused Products
Abstract
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
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Citations
10 Claims
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1. A semiconductor device comprising;
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a semiconductor die;
a first insulation film disposed on a top surface of the semiconductor die;
a first wiring portion disposed on the first insulation film;
an inorganic holding substrate disposed over the top surface of the semiconductor die;
a separate resin layer attaching the holding substrate to the top surface of the semiconductor die;
a second insulation film comprising a side film and a back film, the side film being disposed on a side surface of the semiconductor die and the back film being disposed on a back surface of the semiconductor die;
a second wiring portion disposed on the side film and the back film and connected to the first wiring portion; and
a conductive terminal formed on the second wiring portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a semiconductor die;
a first insulation film disposed on a top surface of the semiconductor die;
a first wiring portion disposed on the first insulation film;
an inorganic holding substrate disposed over the top surface of the semiconductor die;
a separate resin layer attaching the holding substrate to the top surface of the semiconductor die;
a second insulation film disposed on a side surface and a back surface of the semiconductor die;
a second wiring portion disposed on the second insulation film and being in contact with part of a back surface of the first wiring portion, another part of the back surface of the first wiring portion being in contact with the first insulation film on the top surface of the semiconductor die; and
a conductive terminal formed on the second wiring portion.
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10. A semiconductor device comprising:
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a semiconductor die;
a first insulation film disposed on a top surface of the semiconductor die;
a first wiring portion disposed on the first insulation film;
a holding substrate having a thickness of about 400 μ
m and attached to the top surface of the semiconductor die;
a second insulation film comprising a side film and a back film, the side film being disposed on a side surface of the semiconductor die and the back film being disposed on a back surface of the semiconductor die;
a second wiring portion disposed on the side film and the back film and connected to the first wiring portion; and
a conductive terminal formed on the second wiring portion.
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Specification