Method for in situ monitoring of chamber peeling
First Claim
1. A method of in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition, the method comprising the steps of:
- operating the reaction chamber of the semiconductor fabrication apparatus in a cleaning mode to excite the particles generated by the reaction by-product film peeling from the interior wall of the reaction chamber of the semiconductor fabrication apparatus to emit light, the emitted light having a predetermined wavelength associated with the particles;
measuring intensity values of the light emitted at the predetermined wavelength over a predetermined time period; and
comparing the intensity value of the light, measured at a selected time during the predetermined time period, to a predetermined light intensity threshold value wherein if the intensity value of the light measured at the selected time is above the predetermined light intensity threshold value, the chamber condition is abnormal.
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Abstract
A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the particles to emit light; and comparing an intensity value of the light, measured at a selected time during a predetermined time period, to a predetermined light intensity threshold value. If the intensity value of the light measured at the selected time is above the predetermined light intensity threshold value, the chamber condition is abnormal. If the intensity value of the light is equal to or below the predetermined light intensity threshold value, the chamber condition is normal.
47 Citations
16 Claims
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1. A method of in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition, the method comprising the steps of:
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operating the reaction chamber of the semiconductor fabrication apparatus in a cleaning mode to excite the particles generated by the reaction by-product film peeling from the interior wall of the reaction chamber of the semiconductor fabrication apparatus to emit light, the emitted light having a predetermined wavelength associated with the particles; measuring intensity values of the light emitted at the predetermined wavelength over a predetermined time period; and comparing the intensity value of the light, measured at a selected time during the predetermined time period, to a predetermined light intensity threshold value wherein if the intensity value of the light measured at the selected time is above the predetermined light intensity threshold value, the chamber condition is abnormal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of in situ monitoring of particles generated by a reaction by product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition, the method comprising the steps of:
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operating the reaction chamber of the semiconductor fabrication apparatus in a cleaning mode to excite the particles generated by the reaction by-product film peeling from the interior wall of the reaction chamber of the semiconductor fabrication apparatus to emit light; and comparing art intensity value of the light emitted by the particles, measured at a selected time during a predetermined time period, to a predetermined light intensity threshold value to determine the chamber condition. - View Dependent Claims (15, 16)
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Specification