Storage element and memory including a storage layer a magnetization fixed layer and a drive layer

• US 7,313,015 B2
• Filed: 09/30/2005
• Issued: 12/25/2007
• Est. Priority Date: 11/01/2004
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Bessho, Kazuhiro
• Primary Examiner(s): Ho; Hoai V.
• Application Number:
  US11/241,315
• Publication Number:
  US 20060092696A1
• Time in Patent Office: 816 Days
• Field of Search: 365/158, 365/173
• US Class Current: 365/158
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A memory includes a storage element (10) composed of a storage layer (5) for holding information with the magnetization state of a magnetic material, a magnetization fixed layer (3) provided relative to the storage layer (5) through an intermediate layer (4), the magnetization of the storage layer (5) being changed with application of an electric current to the laminated layer direction to record information on the storage layer (5) and a drive layer (7) provided relative to the storage layer (5) through a nonmagnetic layer (6), the magnetic direction thereof being substantially fixed to the laminated layer direction and an electric current supplying means for applying an electric current to the storage element (10) along the laminated layer direction, wherein contents of information to be recorded are changed during a time period in which an electric current is supplied from the electric current supplying means to the storage element (10).

Claims

1. An information storage element comprising:

a storage layer comprising a magnetic material, wherein the magnetization of the storage layer changes when an electric current in a laminated layer direction is applied to the storage layer;

a magnetization fixed layer;

an intermediate layer between the storage layer and the magnetization fixed layer,

a drive layer, the magnetic direction of the drive layer being substantially fixed to the laminated layer direction; and

a non-magnetic layer between the drive layer and the storage layer.

2. A storage element according to claim 1, wherein said intermediate layer is a tunnel insulating layer and said nonmagnetic layer is a nonmagnetic conductive layer.

3. An information storage element, comprising:

a storage layer comprising a magnetic material, wherein the magnetization of the storage layer changes when an electric current in a laminated layer direction is applied to the storage layer;

a magnetization fixed layer;

an intermediate layer between the storage layer and the magnetization fixed layer;

a drive layer, the magnetic direction of the drive layer being substantially fixed to the laminated layer direction; and

a non-magnetic layer between the drive layer and the storage layer wherein,

said drive layer is comprises a first magnetic layer and a second magnetic layer, wherein,

the first magnetic layer comnrises a material with a high spin polarizability and is between the storage layer and the second magnetic layer; and

the second magnetic layer comprises a material with a large vertical.

4. A memory comprising:

(a) a storage element comprising;

a storage layer comprising a magnetic material, wherein the magnetization of the storage layer changes when an electric current in a laminated layer direction is applied to the storage layer;

a magnetization fixed layer;

an intermediate layer between the storage layer and the magnetization fixed layer;

a drive layer, the magnetic direction of the drive layer being substantially fixed to the laminated layer direction;

a non-magnetic layer between the drive layer and the storage layer; and

(b) electric current supplying means for applying an electric current to said storage element along said laminated layer direction, wherein contents of information to be recorded are changed a duration of time in which an electric current is supplied from said electric current supplying means to said storage element.

5. A memory according to claim 4, wherein said electric current applied from said electric current supplying means to said storage element has only one polarity when information is recorded.