Method of making light emitting device with silicon-containing encapsulant
First Claim
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1. A method of making a light emitting device, the method comprising the steps of:
- providing a light emitting diode; and
forming an encapsulant in contact with the light emitting diode, wherein forming the encapsulant comprises;
contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation;
applying actinic radiation at a temperature of less than 120°
C. to initiate hydrosilylation within the silicon-containing resin, the actinic radiation having a wavelength of 700 nm or less; and
heating at less than 150°
C.
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Abstract
A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin consists of silicon-bonded hydrogen and aliphatic unsaturation, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.
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7 Claims
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1. A method of making a light emitting device, the method comprising the steps of:
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providing a light emitting diode; and forming an encapsulant in contact with the light emitting diode, wherein forming the encapsulant comprises; contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation; applying actinic radiation at a temperature of less than 120°
C. to initiate hydrosilylation within the silicon-containing resin, the actinic radiation having a wavelength of 700 nm or less; andheating at less than 150°
C. - View Dependent Claims (2, 3)
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- 4. A light emitting device comprising a light emitting diode and a photopolymerizable composition comprising a silicon-containing resin and a metal-containing catalyst activated by actinic radiation, wherein the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation.
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