Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
First Claim
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1. A method of forming a semiconductor structure having a local mechanical gate stress comprising the steps of:
- providing a semiconductor structure having layers of a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a hard mask located on a surface of a semiconductor substrate, said semiconductor substrate containing a trench isolation region;
patterning said layers to provide at least one patterned gate stack for a NFET and a least one patterned gate stack for a PFET, said NFET and PFET are separated by said trench isolation region;
forming at least one spacer on sidewalls of each patterned gate stack and forming silicided source/drain regions in said semiconductor substrate adjacent each patterned gate stack;
forming a planarized dielectric film that exposes a top surface of each patterned gate stack;
selectively forming a silicide or a tensile metal in said at least one patterned gate stack for said PFET; and
selectively forming a compressive metal in said at least one patterned gate stack for said NFET.
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Abstract
A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.
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Citations
16 Claims
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1. A method of forming a semiconductor structure having a local mechanical gate stress comprising the steps of:
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providing a semiconductor structure having layers of a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a hard mask located on a surface of a semiconductor substrate, said semiconductor substrate containing a trench isolation region; patterning said layers to provide at least one patterned gate stack for a NFET and a least one patterned gate stack for a PFET, said NFET and PFET are separated by said trench isolation region; forming at least one spacer on sidewalls of each patterned gate stack and forming silicided source/drain regions in said semiconductor substrate adjacent each patterned gate stack; forming a planarized dielectric film that exposes a top surface of each patterned gate stack; selectively forming a silicide or a tensile metal in said at least one patterned gate stack for said PFET; and selectively forming a compressive metal in said at least one patterned gate stack for said NFET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a semiconductor structure having a local mechanical gate stress comprising the steps of:
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providing a semiconductor structure having layers of a gate dielectric, a first gate electrode layer, a barrier layer, a second gate electrode layer and a hard mask located on a surface of a semiconductor substrate, said semiconductor substrate containing a trench isolation region and said second gate electrode layer comprising a tensile metal or a silicide; patterning said layers to provide at least one patterned gate stack for a NFET and a least one patterned gate stack for a PFET, said NFET and PFET are separated by said trench isolation region; forming at least one spacer on sidewalls of each patterned gate stack and forming silicided source/drain regions in said semiconductor substrate adjacent each patterned gate stack; forming a planarized dielectric film that exposes a top surface of each patterned gate stack; and selectively forming a compressive metal in said at least one patterned gate stack for said NFET. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification