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Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification

  • US 7,314,789 B2
  • Filed: 12/30/2006
  • Issued: 01/01/2008
  • Est. Priority Date: 12/15/2004
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure having a local mechanical gate stress comprising the steps of:

  • providing a semiconductor structure having layers of a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a hard mask located on a surface of a semiconductor substrate, said semiconductor substrate containing a trench isolation region;

    patterning said layers to provide at least one patterned gate stack for a NFET and a least one patterned gate stack for a PFET, said NFET and PFET are separated by said trench isolation region;

    forming at least one spacer on sidewalls of each patterned gate stack and forming silicided source/drain regions in said semiconductor substrate adjacent each patterned gate stack;

    forming a planarized dielectric film that exposes a top surface of each patterned gate stack;

    selectively forming a silicide or a tensile metal in said at least one patterned gate stack for said PFET; and

    selectively forming a compressive metal in said at least one patterned gate stack for said NFET.

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