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Structure and method for manufacturing strained FINFET

  • US 7,314,802 B2
  • Filed: 01/31/2007
  • Issued: 01/01/2008
  • Est. Priority Date: 02/15/2005
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a strained fin field effect transistor (FINFET) that uses stress material to replace a part of the gate to apply stress to the channel of the FINFET, comprising:

  • fabricating the FINFET with a source, a drain and a stacked gate comprised of two different types of semiconductor materials that have different etching characteristics;

    selectively etching one of the two different types of semiconductor materials of the stacked gate to form a gate gap;

    refilling the gate gap with a stress film to create stress in the FINFET channel, to enhance electron and hole mobility and to improve the performance of the FINFET.

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