Self light-emitting device

• US 7,317,282 B2
• Filed: 12/22/2004
• Issued: 01/08/2008
• Est. Priority Date: 10/29/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Konuma, Toshimitsu, Mizukami, Mayumi, Tsutsui, Tetsuo
• Primary Examiner(s): Patel; Ashok
• Application Number:
  US11/021,070
• Publication Number:
  US 20050099120A1
• Time in Patent Office: 1,112 Days
• Field of Search: 313498-512, 313/484, 313/292, 315/169.3, 428/690, 428/917
• US Class Current: 313/512
• CPC Class Codes: G02F 1/133602 Direct backlight
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/8428 Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 59/8723 Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
• CPC Class Codes: H10K 59/875 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/878 comprising reflective means

Abstract

To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).

Claims

1. A self light-emitting device having a pixel portion comprising a semiconductor device and an EL element electrically connected to the semiconductor device formed on a substrate, the EL element comprising:

a first electrode;

an EL layer over the first electrode;

a second electrode over the EL layer;

an inert gas filled in a space between the second electrode and a cover material and a spacer between the second electrode and the covering material,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

2. The self light-emitting device according to claim 1, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

3. The self light-emitting device according to claim 1, wherein the EL layer comprises a light-emitting layer, and the self light-emitting device further comprises a buffer layer between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode.

4. A self light-emitting device having a pixel portion comprising:

a plurality of first electrodes arranged in stripe shapes over a substrate;

an EL layer over the plurality of first electrodes;

a plurality of second electrodes over the EL layer, the plurality of second electrodes provided in stripe shapes so as to be orthogonal to the plurality of first electrodes;

an inert gas filled in a space between the second electrode and a cover material; and

a spacer between the second electrode and the covering material,

wherein a film thickness (d) of the EL layer satisfies a formula d₁≦

λ

/(4n), where a wavelength of a light generated in the EL layer is λ

, and where a refractive index of the EL layer is n₁, and

wherein a film thickness (d₂) of the second electrode satisfies a formula d₂≦

λ

/(4n₂), where the wavelength of the light generated in the EL layer is λ

, and where a refractive index of the second electrode is n₂.

5. The self light-emitting device according to claim 4, wherein the EL layer comprises a light-emitting layer, and the self light-emitting device further comprises a buffer layer between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode.

6. A self light-emitting device having a pixel portion comprising:

a plurality of first electrodes arranged in stripe shapes over a substrate;

an EL layer over the plurality of first electrodes;

a plurality of second electrodes over the EL layer, the plurality of the second electrodes provided in stripe shapes so as to be orthogonal to the plurality of first electrodes;

an inert gas filled in a space between the second electrode and a cover material; and

a spacer between the second electrode and the covering material,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

7. The self light-emitting device according to claim 6, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

8. The self light-emitting device according to claim 6, wherein the EL layer comprises a light-emitting layer, and the self light-emitting device further comprises a buffer layer between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode.

9. A self light-emitting device comprising:

a first electrode over a substrate;

an EL layer over the first electrode;

a second electrode over the EL layer; and

an inert gas filled in a space between the second electrode and a cover material,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

10. The self light-emitting device according to claim 9, wherein the film thickness (d) of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

11. A self light-emitting device comprising:

a first electrode over a substrate;

an EL layer over the first electrode, the EL layer having a light-emitting layer;

a second electrode over the EL layer;

an inert gas filled in a space between the second electrode and a cover material; and

a buffer layer provided between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

12. The self light-emitting device according to claim 11, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

13. A self light-emitting device having a pixel portion comprising a semiconductor device and an EL element electrically connected to the semiconductor device formed on a substrate, the EL element comprising:

a first electrode;

an EL layer over the first electrode;

a second electrode over the EL layer; and

an inert gas filled in a space between the second electrode and a cover material,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing no occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

14. The self light-emitting device according to claim 13, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

15. A self light-emitting device having a pixel portion comprising a semiconductor device and an EL element electrically connected to the semiconductor device formed on a substrate, the EL element comprising:

a first electrode;

an EL layer over the first electrode, the EL layer having a light-emitting layer;

a second electrode over the EL layer;

an inert gas filled in a space between the second electrode and a cover material; and

a buffer layer provided between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

16. The self light-emitting device according to claim 15, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

17. A self light-emitting device having a pixel portion comprising:

a plurality of first electrodes arranged in stripe shapes over a substrate;

an EL layer over the plurality of first electrodes;

a plurality of second electrodes over the EL layer, the plurality of second electrodes provided in stripe shapes so as to be orthogonal to the plurality of first electrodes; and

an inert gas filled in a space between the second electrode and a cover material,

wherein each of the EL layer and the second electrode are film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

18. The self light-emitting device according to claim 17, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

19. A self light-emitting device having a pixel portion comprising:

a plurality of first electrodes arranged in stripe shapes over a substrate;

an EL layer over the plurality of first electrodes;

a plurality of second electrodes over the EL layer, the plurality of the second electrodes provided in stripe shapes so as to be orthogonal to the plurality of first electrodes;

an inert gas filled in a space between the second electrode and a cover material; and

a buffer layer provided between the EL layer and the second electrode or between the EL layer and the first electrode,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

20. The self light-emitting device according to claim 19, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

21. A self light-emitting device comprising:

a first electrode over a substrate;

an EL layer over the first electrode;

a second electrode over the EL layer;

an inert gas filled in a space between the second electrode and a cover material; and

a spacer between the second electrode and the covering material,

wherein a film thickness (d) of the EL layer satisfies a formula d₁≦

λ

/(4n), where a wavelength of a light generated in the EL layer is λ

, and where a refractive index of the EL layer is n₁ and

wherein a film thickness (d₂) of the second electrode satisfies a formula d₂≦

λ

/(4n₂), where the wavelength of the light generated in the EL layer is λ

, and where a refractive index of the second electrode is n₂.

22. The self light-emitting device according to claim 21, wherein the EL layer comprises a light-emitting layer, and the self light-emitting device further comprises a buffer layer between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode.

23. A self light-emitting device comprising:

a first electrode over a substrate;

an EL layer over the first electrode;

a second electrode over the EL layer;

an inert gas filled in a space between the second electrode and a cover material; and

a spacer between the second electrode and the covering material,

wherein each of the EL layer and the second electrode has a film thickness (d) for preventing occurrence of a guided light in terms of a wavelength of a light generated in the EL layer, and

wherein the light generated in the EL layer is emitted at least to the cover material side.

24. The self light-emitting device according to claim 23, wherein the film thickness (d) of each of the EL layer and the second electrode satisfies a formula d≦

λ

/(4n), when a light with a wavelength generated by the EL layer passes through a medium with a refractive index n.

25. The self light-emitting device according to claim 23, wherein the EL layer comprises a light-emitting layer, and the self light-emitting device further comprises a buffer layer between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode.

26. A self light-emitting device having a pixel portion comprising a semiconductor device and an EL element electrically connected to the semiconductor device formed on a substrate, the EL element comprising:

a first electrode;

an EL layer over the first electrode;

a second electrode over the EL layer; and

an inert gas filled in a space between the second electrode and a cover material; and

a spacer between the second electrode and the covering material,

wherein a film thickness (d) of the EL layer satisfies a formula d₁≦

λ

/(4n), where a wavelength of a light generated in the EL layer is λ

, and where a refractive index of the EL layer is n₁, and

wherein a film thickness (d₂) of the second electrode satisfies a formula d₂≦

λ

/(4n₂), where the wavelength of the light generated in the EL layer is λ

, and where a refractive index of the second electrode is n₂.

27. The self light-emitting device according to claim 26, wherein the EL layer comprises a light-emitting layer, and the self light-emitting device further comprises a buffer layer between the light-emitting layer and the second electrode or between the light-emitting layer and the first electrode.