Nitride semiconductor light emitting device and method for manufacturing the same

• US 7,319,044 B2
• Filed: 12/22/2006
• Issued: 01/15/2008
• Est. Priority Date: 12/23/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Kim, Sung Wook, Han, Young Suk, Yoon, Suk Kil
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US11/615,863
• Publication Number:
  US 20070105261A1
• Time in Patent Office: 389 Days
• Field of Search: 438 22- 47, 438931-956
• US Class Current: 438/22
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.

Claims

1. A method of manufacturing a nitride semiconductor light emitting device, comprising:

providing a substrate having an approximately rectangular top surface;

forming an n-type nitride semiconductor layer on the substrate;

forming an activation layer comprising an un-doped nitride semiconductor material on the n-type nitride semiconductor layer;

forming a p-type nitride semiconductor layer on the activation layer;

removing some portions of the p-type nitride semiconductor layer and activation layer to expose an electrode region having a predetermined area adjacent to a center of a lateral side of the top surface of the n-type nitride semiconductor layer;

forming an n-type electrode on the electrode region; and

forming a p-type electrode on the p-type nitride semiconductor layer, the p-type electrode having a bonding pad formed adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and having a band-shaped extension connected to the bonding pad to extend along a lateral side in opposite directions, at which the bonding pad is formed and along opposite lateral sides at which the n-type and the bonding pad are not formed,

wherein the distance between the n-type electrode and the p-type electrode is substantially constant and configured to flow current uniformly over an entire light emitting region.

2. The method as set forth in claim 1, further comprising the step of:

forming a buffer layer on the top surface of the substrate for providing lattice matching.

3. The method as set forth in claim 1, further comprising the step of:

forming a transparent layer on the top surface of the p-type nitride semiconductor layer for providing an ohmic contact.