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Vertically stacked field programmable nonvolatile memory and method of fabrication

  • US 7,319,053 B2
  • Filed: 02/14/2006
  • Issued: 01/15/2008
  • Est. Priority Date: 11/16/1998
  • Status: Expired due to Fees
First Claim
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1. A process for fabricating a 3-D semiconductor memory device comprising the steps of:

  • forming a first stack comprising a P-N diode and a state change element;

    forming a second stack comprising a P-N diode and a state change element overlying the first stack,wherein the first and second stacks comprise elements of a pillar in a 3-D memory array, wherein the 3-D memory array comprises a plurality of layers of memory cells stacked vertically above one another, andforming edge regions on the pillar using a plasma oxidation process.

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