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Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam

  • US 7,319,055 B2
  • Filed: 09/16/2004
  • Issued: 01/15/2008
  • Est. Priority Date: 12/21/2001
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a semiconductor film on insulating surface;

    patterning the semiconductor film to form a first semiconductor island;

    crystallizing the first semiconductor island by laser irradiation;

    patterning the crystallized first semiconductor island to form at least two second semiconductor islands;

    forming a unitary circuit comprising at least first and second thin film transistors, wherein the first and second thin film transistors include one and the other of the two second semiconductor islands, respectively, as an active layer.

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