Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on insulating surface;
patterning the semiconductor film to form a first semiconductor island;
crystallizing the first semiconductor island by laser irradiation;
patterning the crystallized first semiconductor island to form at least two second semiconductor islands;
forming a unitary circuit comprising at least first and second thin film transistors, wherein the first and second thin film transistors include one and the other of the two second semiconductor islands, respectively, as an active layer.
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Abstract
To provide a method of efficiently configuring a circuit requiring high inter-device consistency by using thin-film transistors. A semiconductor layer is formed on a substrate and is patterned into desired shapes to form first semiconductor islands. The first semiconductor islands are uniformly crystallized by laser irradiation within the surface areas thereof. Thereafter, the semiconductor layers are patterned into desired shapes to become active layers of the thin-film transistors layer. Active layers of all of thin-film transistors constituting one unitary circuit are formed of one of the first semiconductor islands in this case. Thus, the TFTs mutually realize high consistency.
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Citations
24 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on insulating surface; patterning the semiconductor film to form a first semiconductor island; crystallizing the first semiconductor island by laser irradiation; patterning the crystallized first semiconductor island to form at least two second semiconductor islands; forming a unitary circuit comprising at least first and second thin film transistors, wherein the first and second thin film transistors include one and the other of the two second semiconductor islands, respectively, as an active layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on insulating surface; patterning the semiconductor film to form a first semiconductor island; crystallizing the first semiconductor island by laser irradiation; patterning the crystallized first semiconductor island to form a plurality of second semiconductor islands; forming a unitary circuit comprising a plurality of thin film transistors, wherein each of the plurality of thin film transistors of the unitary circuit comprises at least one of the plurality of second semiconductor islands formed from the same first semiconductor island. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on insulating surface; patterning the semiconductor film to form a first semiconductor island; crystallizing the first semiconductor island by scanning the first semiconductor island with laser light in a first direction; patterning the crystallized first semiconductor island to form at least two second semiconductor islands; forming at least first and second thin film transistors using the two semiconductor islands, respectively; forming a unitary circuit comprising at least the first and second thin film transistors, wherein the first and second thin film transistors include one and the other of the two second semiconductor islands, respectively, as an active layer in such a manner that a carrier flow direction of a channel formation region is approximately aligned with the first direction. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on insulating surface; patterning the semiconductor film to form a first semiconductor island; crystallizing the first semiconductor island by laser irradiation by scanning the first semiconductor island with laser light in a first direction; patterning the crystallized first semiconductor island to form a plurality of second semiconductor islands; forming a plurality of thin film transistors using the plurality of second semiconductor islands, respectively; forming a unitary circuit comprising the plurality of thin film transistors, wherein each of the plurality of thin film transistors of the unitary circuit comprises at least one of the plurality of second semiconductor islands formed from the same first semiconductor island and a carrier flow direction in a channel formation region in each of the second semiconductor islands is approximately aligned with the first direction. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsShiga, Aiko, Tanada, Yoshifumi, Yamazaki, Shunpei, Kokubo, Chiho
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Primary Examiner(s)Chambliss; Alonzo
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Application NumberUS10/941,848Publication NumberTime in Patent Office1,216 DaysField of SearchNoneUS Class Current438/164CPC Class CodesH01L 21/02381 Silicon, silicon germanium,...H01L 21/0242 Crystalline insulating mate...H01L 21/02422 Non-crystalline insulating ...H01L 21/02488 Insulating materialsH01L 21/02502 consisting of two layersH01L 21/02532 Silicon, silicon germanium,...H01L 21/02609 Crystal orientationH01L 21/0268 Shape of maskH01L 21/02683 Continuous wave laser beamH01L 21/02686 Pulsed laser beamH01L 21/02691 Scanning of a beamH01L 27/12 the substrate being other t...H01L 27/1285 using control of the anneal...H01L 29/66757 Lateral single gate single ...H01L 29/78675 with normal-type structure,...
