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Light emitting-diode chip and a method for producing same

  • US 7,319,247 B2
  • Filed: 03/16/2001
  • Issued: 01/15/2008
  • Est. Priority Date: 04/26/2000
  • Status: Expired due to Term
First Claim
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1. A light-emitting diode chip, comprising:

  • an electrically conductive substrate having a first substrate surface, a second substrate surface opposite the first substrate surface, and at least one side surface;

    a GaN-based radiation-emitting epitaxial layer sequence comprising an n-type epitaxial layer deposited on the first substrate surface and a p-type epitaxial layer deposited on the n-type epitaxial layer;

    a reflective, bondable p-contact layer comprising a first layer transmissive of radiation emitted by the epitaxial sequence and disposed on a side of the epitaxial layer sequence opposite the substrate and a second layer reflective of radiation emitted by the epitaxial sequence and disposed on the first layer; and

    a contact metallization disposed over only a portion of the second substrate surface,wherein radiation emitted by the epitaxial layer is decoupled through a portion of the second substrate surface over which the metallization is not disposed and through the substrate side surface.

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