Chip structure with redistribution traces

• US 7,319,277 B2
• Filed: 07/14/2005
• Issued: 01/15/2008
• Est. Priority Date: 05/08/2003
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US11/181,244
• Publication Number:
  US 20060022311A1
• Time in Patent Office: 915 Days
• Field of Search: 257/784, 257/781, 257/786, 257/E23.02
• US Class Current: 257/781
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05157 Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/056 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05669 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05673 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/4912 : Layout
• CPC Class Codes: H01L 2224/49171 : Fan-out arrangements
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 23/3171 : the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A semiconductor chip or wafer comprises a passivation layer and a circuit line. The passivation layer comprises an inorganic layer. The circuit line is over and in touch with the inorganic layer of the passivation layer, wherein the circuit line comprises a first contact point connected to only one second contact point exposed by an opening in the passivation layer, and the positions of the first contact point and the only one second contact point from a top view are different, and the first contact point is used to be wirebonded thereto.

Claims

1. A chip package comprising:

a chip comprising;

a semiconductor substrate,

an electronic device in or on said semiconductor substrate,

a metallization structure over said semiconductor substrate,

a passivation layer over said metallization structure, wherein said passivation layer comprises a nitiide layer, an opening in said passivation layer exposing a first contact pad of said metallization structure, wherein there is no electronic device in or on said semiconductor substrate directly under said first contact pad, and

a circuit trace over said passivation layer and said first contact pad, wherein said circuit trace comprises a second contact pad connected to said first contact pad through said opening in said passivation layer, the positions of said first and second contact pads from a top perspective view being different, said second contact pad being directly over said electronic device, and wherein said circuit trace comprises a first metal layer containing gold with greater than 90 weight percent and having a thickness of between 2 and 30 microns, a second metal layer containing titanium under said first metal layer, and a third metal layer containing gold between said first and second metal layers; and

a wire wirebonded to said second contact pad.

2. The chip package claim 1, wherein said nitride layer has a thickness of between 0.2 and 1.2 μ

m.

3. The chip package of claim 1, wherein said circuit trace is directly on said nitride layer.

4. The chip package of claim 1, wherein said electronic device comprises a MOS device.

5. The chip package of claim 1, wherein said second metal layer comprises a titanium-tungsten alloy.

6. The chip package of claim 1, wherein said first metal layer contains gold with greater than 97 weight percent.

7. The chip package of claim 1 further comprising a lead frame connected to said second contact pad through said wire, and a polymer structure encapsulating said wire.

8. The chip package of claim 1, wherein said chip has a first edge and a second edge neighboring to each other, wherein the minimum distance between said first edge and said first contact pad is smaller than that between said second edge and said first contact pad, and the minimum distance between said first edge and said second contact pad is greater than that between said second edge and said second contact pad.

9. The chip package of claim 1 further comprising a polymer layer over said circuit trace, wherein an opening in said polymer layer exposes said second contact pad.

10. The chip package of claim 9, wherein said polymer layer has a thickness of between 2 and 15 microns.

11. The chip package of claim 9, wherein said polymer layer comprises polyimide.

12. The chip package of claim 9, wherein said polymer layer comprises benzocyclobutene.