Light-emitting device and light-emitting device array using a whispering gallery mode, and method for manufacturing same
First Claim
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1. A light-emitting device using a convex-whispering gallery mode comprising:
- a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed in the PIN-type semiconductor; and
an electrode connected to a region around the hole for applying current thereto,wherein light is emitted around the hole by inducing a convex-whispering gallery resonance partly by gain guiding.
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Abstract
A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.
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Citations
10 Claims
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1. A light-emitting device using a convex-whispering gallery mode comprising:
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a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed in the PIN-type semiconductor; and an electrode connected to a region around the hole for applying current thereto, wherein light is emitted around the hole by inducing a convex-whispering gallery resonance partly by gain guiding. - View Dependent Claims (2, 3, 4, 9)
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5. A light-emitting device array using a convex-whispering gallery mode comprising:
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a plurality of light-emitting devices, each light-emitting device includes; a PIN-type semiconductor including an active region having a plurality of quantum wells, and a p-type distributed Bragg reflector and an n-type distributed Bragg reflector with an active region sandwiched therebetween, wherein the PIN-type semiconductor has one or more holes, each of the holes being etched at least up to the active region; and an electrode connected to a region around said each of the holes for applying current thereto, wherein light is emitted around said each of the holes by inducing a convex-whispering gallery resonance partly by gain guiding. - View Dependent Claims (6, 7, 8, 10)
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Specification