Light-emitting device and light-emitting device array using a whispering gallery mode, and method for manufacturing same

• US 7,319,711 B2
• Filed: 10/17/2005
• Issued: 01/15/2008
• Est. Priority Date: 10/17/2005
• Status: Expired due to Fees

• Current Assignee: Postech Academy-Industry Foundation, Postech Foundation
• Original Assignee: Postech Academy-Foundation Foundation, Postech Foundation
• Inventors: Kim, Moojin, An, Sung Jae, Kim, Dongkwon, Lee, Seungeun, Kwon, O'Dae
• Primary Examiner(s): Harvey; Minsun Oh
• Assistant Examiner(s): Niu; Xinning
• Application Number:
  US11/250,344
• Publication Number:
  US 20070090338A1
• Time in Patent Office: 820 Days
• Field of Search: 372/50.1, 372 5011- 5023
• US Class Current: 372/92
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/1075 Disk lasers with special modes, e.g. whispering gallery lasers
• CPC Class Codes: H01S 5/1096 in a single cavity
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/2081 using special etching techniques
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.

Claims

1. A light-emitting device using a convex-whispering gallery mode comprising:

a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed in the PIN-type semiconductor; and

an electrode connected to a region around the hole for applying current thereto,

wherein light is emitted around the hole by inducing a convex-whispering gallery resonance partly by gain guiding.

2. The light-emitting device of claim 1, wherein the active region is formed by depositing first layers having a relatively high band-gap energy and second layers having a relatively low band-gap energy alternately, and wherein the first and the second layers include a plurality of quantum wells of Al_xGa_1-xAs layers.

3. The light-emitting device of claim 1, wherein the hole is etched up to the active region.

4. The light-emitting device of claim 3, wherein the diameter of the hole is 10 nm to 100 μ

m.

9. The light-emitting device of claim 1, wherein the electrode is line-shaped.

5. A light-emitting device array using a convex-whispering gallery mode comprising:

a plurality of light-emitting devices, each light-emitting device includes;

a PIN-type semiconductor including an active region having a plurality of quantum wells, and a p-type distributed Bragg reflector and an n-type distributed Bragg reflector with an active region sandwiched therebetween, wherein the PIN-type semiconductor has one or more holes, each of the holes being etched at least up to the active region; and

an electrode connected to a region around said each of the holes for applying current thereto,

wherein light is emitted around said each of the holes by inducing a convex-whispering gallery resonance partly by gain guiding.

6. The light-emitting device array of claim 5, wherein the diameter of the hole is 10 nm to 100 μ

m.

7. The light-emitting device array of claim 5, wherein the PIN semiconductor has an area made by an ion implantation except the region around said each of the holes in order to isolate between the holes.

8. The array of claim 5, wherein the active region is formed by depositing first layers having relatively high band-gap energy and second layers having relatively low band-gap energy alternately, and wherein the first and the second layers include Al_xGa_1-xAs layers.

10. The light-emitting device of claim 5, wherein the electrodes are line-shaped.