Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides
First Claim
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1. A method of forming an atomistically straight grain boundary in a bicrystal epitaxial film formed on a surface of a substrate, comprising the steps of:
- (a) preparing a bicrystal substrate having a straight grain boundary as a template, wherein the misorientation angle of a first and a second crystal of the bicrystal substrate is equal to;
arctan k1/h1+arctan k2/h2, where h1 and k1 are the Miller indices of a first grain of the bicrystal substrate and h2 and k2 are the Miller indices of a second grain of the bicrystal substrate; and
(b) depositing the film on the substrate using a layer-by-layer growth mode so that the boundary between the grains of the film is atomistically straight.
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Abstract
A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains of the substrate are chosen such that the misorientation angle of the film is equal to arctan k1/h1+arctan k2/h2. The film is grown on the substrate using a layer-by-layer growth mode.
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Citations
12 Claims
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1. A method of forming an atomistically straight grain boundary in a bicrystal epitaxial film formed on a surface of a substrate, comprising the steps of:
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(a) preparing a bicrystal substrate having a straight grain boundary as a template, wherein the misorientation angle of a first and a second crystal of the bicrystal substrate is equal to; arctan k1/h1+arctan k2/h2, where h1 and k1 are the Miller indices of a first grain of the bicrystal substrate and h2 and k2 are the Miller indices of a second grain of the bicrystal substrate; and (b) depositing the film on the substrate using a layer-by-layer growth mode so that the boundary between the grains of the film is atomistically straight. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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