Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor
First Claim
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1. An ion-sensitive field effect transistor with a gate comprising a sensitive layer, wherein the sensitive layer comprises a metal oxide nitride alloy and/or a metal oxide nitride compound, wherein the metal oxide nitride alloy is a hafnium tantalum oxide nitride alloy and the metal oxide nitride compound is a hafnium tantalum oxide nitride compound.
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Abstract
An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.
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14 Claims
- 1. An ion-sensitive field effect transistor with a gate comprising a sensitive layer, wherein the sensitive layer comprises a metal oxide nitride alloy and/or a metal oxide nitride compound, wherein the metal oxide nitride alloy is a hafnium tantalum oxide nitride alloy and the metal oxide nitride compound is a hafnium tantalum oxide nitride compound.
- 2. An ion-sensitive field effect transistor with a gate comprising a sensitive layer, wherein the sensitive layer comprises a metal oxide nitride alloy and/or a metal oxide nitride compound, wherein the metal oxide nitride alloy is a zirconium tantalum oxide nitride alloy and the metal oxide nitride compound is a zirconium tantalum oxide nitride compound.
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5. A method for producing an ion-sensitive field effect transistor, comprising:
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providing a substrate with a source region and a drain region; and providing a gate with a sensitive layer, wherein the sensitive layer includes a metal oxide nitride alloy and/or a metal oxide nitride compound, wherein the metal oxide nitride alloy is a hafnium tantalum oxide nitride alloy and the metal oxide nitride compound is a hafnium tantalum oxide nitride compound. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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14. A method for producing an ion-sensitive field effect transistor, comprising:
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providing a substrate with a source region and a drain region; and providing a gate with a sensitive layer, wherein the sensitive layer includes a metal oxide nitride alloy and/or a metal oxide nitride compound, wherein the metal oxide nitride alloy is a zirconium tantalum oxide nitride alloy and the metal oxide nitride compound is a zirconium tantalum oxide nitride compound.
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Specification