Compensating for coupling in non-volatile storage
First Claim
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1. A non-volatile memory system, comprising:
- a first set of non-volatile storage elements capable of storing data for at least a first grouping and a second grouping;
a second set of non-volatile storage elements adjacent to said first set of non-volatile storage elements, said second set of non-volatile storage elements associated with at least four data states; and
one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits determine charge level data for said second set of non-volatile storage elements, said one or more managing circuits perform multiple read operations using different reference levels distinguishing between two adjacent data states, each of said first set of non-volatile storage elements choose to record information associated with one of said read operations based on charge level data for a respective adjacent non-volatile storage element of said second set of multi-state non-volatile storage elements, said recorded information indicates data values for said first grouping.
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Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
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Citations
19 Claims
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1. A non-volatile memory system, comprising:
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a first set of non-volatile storage elements capable of storing data for at least a first grouping and a second grouping; a second set of non-volatile storage elements adjacent to said first set of non-volatile storage elements, said second set of non-volatile storage elements associated with at least four data states; and one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits determine charge level data for said second set of non-volatile storage elements, said one or more managing circuits perform multiple read operations using different reference levels distinguishing between two adjacent data states, each of said first set of non-volatile storage elements choose to record information associated with one of said read operations based on charge level data for a respective adjacent non-volatile storage element of said second set of multi-state non-volatile storage elements, said recorded information indicates data values for said first grouping. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A non-volatile memory system, comprising:
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a first set of multi-stage non-volatile storage elements capable of storing data for at least a first page and a second page; a second set of non-volatile storage elements adjacent to said first set of multi-state non-volatile storage elements, said second set of non-volatile storage elements associated with at least four data states; and one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits determine charge level data for said second set of non-volatile storage elements, said one or more managing circuits read first data from said first set of non-volatile storage elements using a reference associated with a first set of two adjacent data states and read second data from said first set of non-volatile storage elements using multiple references associated with a second set of two adjacent data states, each of said first set of non-volatile storage elements choose information associated with one of said multiple references based on charge level data for a respective adjacent non-volatile storage element of said second set of multi-state non-volatile storage elements, said first data and said second data in combination indicate data values for said first page of data. - View Dependent Claims (9, 10, 11)
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12. A non-volatile memory system, comprising:
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a first set of multi-stage non-volatile storage elements capable of storing data for at least a first grouping and a second grouping; a second set of non-volatile storage elements adjacent to said first set of multi-state non-volatile storage elements, said second set of non-volatile storage elements associated with at least four data states; and one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits determine charge level data for said second set of non-volatile storage elements and perform multiple read processes relative to a first reference value for distinguishing threshold voltages relative to two adjacent data states for said first set of non-volatile storage elements, each read process uses a different one of a predetermined set of offsets with said first reference value, each of at least a subset of said first set of non-volatile storage element provides final data from an appropriate one of said read processes corresponding to one offset that is associated with a respective adjacent non-volatile storage element, said one or more managing circuits determine data values for said first grouping based on said final data without using other data from user data read processes based on non-zero offsets to reference values between other pairs of adjacent data states. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification