Substrate having silicon germanium material and stressed silicon nitride layer
First Claim
1. A method of fabricating a semiconductor device, the method comprising:
- (a) forming a doped silicon region on a substrate;
(b) forming on the substrate, a silicon germanium material adjacent to the doped silicon region to induce a stress in the doped silicon region;
(c) forming on the substrate, a stressed silicon nitride layer over at least a portion of the doped silicon region to further stress the doped silicon region; and
(d) forming a stressed dielectric layer having a tensile stress of at least about 200 MPa over at least a portion of the stressed silicon nitride layer.
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Accused Products
Abstract
A method of fabricating a semiconductor device includes providing a region having doped silicon region on a substrate, and forming a silicon germanium material adjacent to the region on the substrate. A stressed silicon nitride layer is formed over at least a portion of the doped silicon region on the substrate. The silicon germanium layer and stressed silicon nitride layer induce a stress in the doped silicon region of the substrate. In one version, the semiconductor device has a transistor with source and drain regions having the silicon germanium material, and the doped silicon region forms a channel that is configured to conduct charge between the source and drain regions. The stressed silicon nitride layer is formed over at least a portion of the channel, and can be a tensile or compressively stressed layer according the desired device characteristics.
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Citations
29 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a doped silicon region on a substrate; (b) forming on the substrate, a silicon germanium material adjacent to the doped silicon region to induce a stress in the doped silicon region; (c) forming on the substrate, a stressed silicon nitride layer over at least a portion of the doped silicon region to further stress the doped silicon region; and (d) forming a stressed dielectric layer having a tensile stress of at least about 200 MPa over at least a portion of the stressed silicon nitride layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 27)
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10. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a transistor on a substrate by; (i) forming a source and a drain on the substrate, each of the source and drain comprising silicon germanium material extending throughout the source and drain; and (ii) forming a channel region configured to conduct charge between the source and drain, the channel region comprising doped silicon, whereby stress is induced in the channel region by the silicon germanium material extending throughout the source and drain; and (b) forming a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region; and (c) forming a stressed dielectric layer over at least a portion of the stressed silicon nitride layer, whereby the silicon germanium material, overlying stressed silicon nitride layer and stressed dielectric layer induce stress in the channel region that increases the carrier mobility of channel region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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(a) a transistor comprising; (i) source and drain comprising silicon germanium material; and (ii) a channel region configured to conduct charge between the source and drain, the channel region comprising doped silicon, whereby stress is induced in the channel region by the silicon germanium material; (b) a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, and (c) a stressed dielectric layer having a tensile stress of at least about 200 MPa over at least a portion of the stressed silicon nitride layer, whereby the silicon germanium material, overlying stressed silicon nitride layer and stressed dielectric layer induce stress in the channel region that increases the carrier mobility of the channel region. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a transistor on a substrate by; (i) forming a source and a drain on the substrate, each of the source and drain comprising silicon germanium material extending throughout the source and drain; and (ii) forming a channel region configured to conduct charge between the source and drain, the channel region comprising germanium, whereby stress is induced in the channel region by the silicon germanium material in the source and drain; and (b) forming a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increases the carrier mobility of the channel region.
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26. A semiconductor device comprising:
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(a) a transistor comprising; (i) source and drain comprising silicon germanium material extending throughout the source and drain; and (ii) a channel region configured to conduct charge between the source and drain, the channel region comprising germanium, whereby stress is induced in the channel region by the silicon germanium material; and (b) a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increase the carrier mobility of the channel region.
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28. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a transistor on a substrate by; (i) forming a source and a drain on the substrate, each of the source and drain comprising silicon germanium material extending throughout the source and drain, the silicon germanium material having a chemical stoichiometery of Si1-xGex, where x is from about 0.15 to about 0.3; and (ii) forming a channel region configured to conduct charge between the source and drain, the channel region comprising doped silicon, whereby stress is induced in the channel region by the silicon germanium material in the source and drain; and (b) forming a stressed silicon nitride layer having a tensile stress of at least about 1.5 GPa over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region; and (c) forming a stressed dielectric layer having a tensile stress of at least about 200 MPa over at least a portion of the stressed silicon nitride layer, whereby the silicon germanium material, overlying stressed silicon nitride layer and stressed dielectric layer induce stress in the channel region that increases the carrier mobility of channel region.
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29. A semiconductor device comprising:
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(a) a transistor comprising; (i) a source and drain comprising silicon germanium material extending throughout the source and drain, the silicon germanium material having a chemical stoichiometery of Si1-xGex, where x is from about 0.15 to about 0.3; and (ii) a channel region configured to conduct charge between the source and drain, the channel region comprising germanium, whereby stress is induced in the channel region by the silicon germanium material; (b) a trench adjacent to the transistor and comprising a stressed dielectric material, the trench having a width and height, the width greater than the height; (c) a stressed silicon nitride layer with a compressive stress having an absolute value of at least about 2.5 GPa over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region; and (d) a stressed dielectric layer over at least a portion of the stressed silicon nitride layer, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increases the carrier mobility of the channel region.
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Specification