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Semiconductor substrate process using a low temperature deposited carbon-containing hard mask

  • US 7,323,401 B2
  • Filed: 08/08/2005
  • Issued: 01/29/2008
  • Est. Priority Date: 08/08/2005
  • Status: Expired due to Fees
First Claim
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1. A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, said method comprising:

  • placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern;

    depositing a carbon-containing hard mask layer on said substrate by;

    (a) introducing a carbon-containing process gas into the chamber and including a layer-enhancing additive gas that enhances thermal properties of the deposited carbon-containing layer,(b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path,(c) coupling RF plasma bias power or bias voltage to the workpiece;

    photolithographically defining said predetermined pattern in said carbon-containing hard mask layer;

    etching the target layer in the presence of said hard mask layer.

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