Method of selective tungsten deposition on a silicon surface
First Claim
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1. A method of selectively depositing tungsten on a silicon surface, the method comprising:
- providing a substrate with a silicon surface in a deposition chamber;
pre-flowing silane into the deposition chamber;
pumping down the chamber while stopping all gas flow into the deposition chamber for at least one second after pre-flowing the silane but before selectively depositing tungsten on the silicon surface; and
flowing silane and a tungsten precursor into the deposition chamber to selectively deposit tungsten on the silicon surface.
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Abstract
In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on a silicon surface. The silane pre-flow helps minimize silicon consumption, while the pump down helps prevent loss of tungsten selectivity to silicon.
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Citations
20 Claims
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1. A method of selectively depositing tungsten on a silicon surface, the method comprising:
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providing a substrate with a silicon surface in a deposition chamber; pre-flowing silane into the deposition chamber; pumping down the chamber while stopping all gas flow into the deposition chamber for at least one second after pre-flowing the silane but before selectively depositing tungsten on the silicon surface; and flowing silane and a tungsten precursor into the deposition chamber to selectively deposit tungsten on the silicon surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating an integrated circuit, the method comprising:
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implanting dopants in a silicon substrate; placing the substrate in a deposition chamber; pre-flowing silane into the deposition chamber; pumping down the deposition chamber while stopping all gas flow into the deposition chamber for at least one second after the pre-flowing of the silane into the deposition chamber but before selectively depositing tungsten on a surface of the substrate; and selectively depositing tungsten on the surface of the substrate after the pumping down of the deposition chamber but before the substrate is removed from the chamber. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of selectively depositing tungsten on silicon, the method comprising:
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pre-flowing silane into a deposition chamber containing a silicon substrate; pumping down the deposition chamber while stopping all gas into the deposition chamber for at least one second after the pre-flowing of the silane into the deposition chamber; and selectively depositing tungsten on a surface of the silicon substrate after the pumping down of the deposition chamber but before the silicon substrate is removed from the deposition chamber. - View Dependent Claims (17, 18, 19, 20)
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Specification