Method of selective tungsten deposition on a silicon surface

• US 7,323,411 B1
• Filed: 09/22/2004
• Issued: 01/29/2008
• Est. Priority Date: 09/26/2003
• Status: Expired due to Fees

• Current Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Original Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Inventors: Blosse, Alain
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US10/947,563
• Time in Patent Office: 1,224 Days
• Field of Search: 438/674, 438/677, 438/680, 438/685, 257/E21.17, 427/96.8, 427/124, 427/255.28
• US Class Current: 438/674
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288

Abstract

In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on a silicon surface. The silane pre-flow helps minimize silicon consumption, while the pump down helps prevent loss of tungsten selectivity to silicon.

Claims

1. A method of selectively depositing tungsten on a silicon surface, the method comprising:

providing a substrate with a silicon surface in a deposition chamber;

pre-flowing silane into the deposition chamber;

pumping down the chamber while stopping all gas flow into the deposition chamber for at least one second after pre-flowing the silane but before selectively depositing tungsten on the silicon surface; and

flowing silane and a tungsten precursor into the deposition chamber to selectively deposit tungsten on the silicon surface.

2. The method of claim 1 wherein the tungsten precursor comprises tungsten hexafluoride.

3. The method of claim 1 wherein the silicon surface is of the substrate.

4. The method of claim 1 wherein the deposition chamber comprises a chemical vapor deposition chamber.

5. The method of claim 1 further comprising annealing the substrate in the deposition chamber after selectively depositing tungsten on the silicon surface.

6. The method of claim 1 further comprising performing a source implant and a drain implant on the substrate prior to pre-flowing the silane.

7. The method of claim 6 further comprising subjecting the substrate to a rapid thermal anneal after the source and drain implants.

8. The method of claim 1 further comprising performing surface preparation steps on the silicon surface prior to pre-flowing the silane.

9. The method of claim 8 wherein the surface preparation steps comprise:

a mask cleaning step;

a hydrogen plasma clean step; and

a wet clean step.

10. A method of fabricating an integrated circuit, the method comprising:

implanting dopants in a silicon substrate;

placing the substrate in a deposition chamber;

pre-flowing silane into the deposition chamber;

pumping down the deposition chamber while stopping all gas flow into the deposition chamber for at least one second after the pre-flowing of the silane into the deposition chamber but before selectively depositing tungsten on a surface of the substrate; and

selectively depositing tungsten on the surface of the substrate after the pumping down of the deposition chamber but before the substrate is removed from the chamber.

11. The method of claim 10 wherein the deposition chamber comprises a chemical vapor deposition chamber.

12. The method of claim 10 wherein selectively depositing tungsten on the surface of the silicon substrate comprises:

flowing silane and tungsten hexafluoride into the deposition chamber.

13. The method of claim 10 further comprising annealing the silicon substrate in the deposition chamber.

14. The method of claim 10 further comprising:

annealing the silicon substrate after implanting the dopants in the silicon substrate; and

cleaning the surface of the silicon substrate before placing the substrate in the deposition chamber.

15. The method of claim 14 wherein cleaning the surface of the silicon substrate comprises:

performing a mask cleaning step;

performing a hydrogen plasma cleaning step; and

performing a wet cleaning step.

16. A method of selectively depositing tungsten on silicon, the method comprising:

pre-flowing silane into a deposition chamber containing a silicon substrate;

pumping down the deposition chamber while stopping all gas into the deposition chamber for at least one second after the pre-flowing of the silane into the deposition chamber; and

selectively depositing tungsten on a surface of the silicon substrate after the pumping down of the deposition chamber but before the silicon substrate is removed from the deposition chamber.

17. The method of claim 16 further comprising:

annealing the silicon substrate in the deposition chamber after selectively depositing tungsten on the surface of the silicon substrate.

18. The method of claim 16 wherein the surface of the silicon substrate is cleaned prior to placing the silicon substrate in the deposition chamber.

19. The method of claim 16 wherein selectively depositing tungsten on the surface of the silicon substrate comprises:

flowing silane and a tungsten precursor into the deposition chamber.

20. The method of claim 19 wherein the tungsten precursor comprises tungsten hexafluoride.