Patterned atomic layer epitaxy
First Claim
Patent Images
1. A method, comprising:
- patterning a layer by removing each of a plurality of nanoscale passivating particles which each passivate a corresponding one of a first plurality of nanoscale structural particles forming the layer; and
depositing each of a second plurality of nanoscale structural particles on each of corresponding ones of the first plurality of nanoscale structural particles from which one of the plurality of nanoscale passivating particles was removed;
wherein at least one of the patterning and the depositing is at least partially automated.
4 Assignments
0 Petitions
Accused Products
Abstract
A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanoscale structural particles is deposited on each of corresponding ones of the first plurality of nanoscale structural particles that is not passivated by one of the plurality of nanoscale passivating particles.
-
Citations
26 Claims
-
1. A method, comprising:
-
patterning a layer by removing each of a plurality of nanoscale passivating particles which each passivate a corresponding one of a first plurality of nanoscale structural particles forming the layer; and depositing each of a second plurality of nanoscale structural particles on each of corresponding ones of the first plurality of nanoscale structural particles from which one of the plurality of nanoscale passivating particles was removed; wherein at least one of the patterning and the depositing is at least partially automated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method, comprising:
-
(a) patterning a layer by removing each of a first plurality of nanoscale passivating particles which each passivate a corresponding one of a first plurality of nanoscale structural particles forming the layer; (b) forming each of a second plurality of nanoscale structural particles on each of corresponding ones of the first plurality of nanoscale structural particles from which one of the first plurality of nanoscale passivating particles was removed, wherein each of the second plurality of nanoscale structural particles is passivated; (c) removing each of a second plurality of nanoscale passivating particles which each passivate a corresponding one of a third plurality of nanoscale structural particles forming the layer; and (d) forming each of a fourth plurality of nanoscale structural particles on each of corresponding ones of the third plurality of nanoscale structural particles from which one of the plurality of second plurality of nanoscale passivating particles was removed, wherein each of the fourth plurality of nanoscale structural particles is passivated; wherein at least one of steps (a)-(d) is at least partially automated. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
-
-
23. A method, comprising:
-
patterning a layer by placing each of a plurality of nanoscale passivating particles on a corresponding one of a first plurality of nanoscale structural particles forming the layer, wherein the layer comprises the first plurality of nanoscale structural particles and a second plurality of nanoscale structural particles and has a thickness about equal to a dimension of one of the first and second pluralities of nanoscale structural particles; and depositing each of a third plurality of nanoscale particles molecules on each of corresponding ones of the second plurality of nanoscale structural particles; wherein at least one of the patterning and the depositing is at least partially automated. - View Dependent Claims (24, 25, 26)
-
Specification