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Patterned atomic layer epitaxy

  • US 7,326,293 B2
  • Filed: 03/25/2005
  • Issued: 02/05/2008
  • Est. Priority Date: 03/26/2004
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • patterning a layer by removing each of a plurality of nanoscale passivating particles which each passivate a corresponding one of a first plurality of nanoscale structural particles forming the layer; and

    depositing each of a second plurality of nanoscale structural particles on each of corresponding ones of the first plurality of nanoscale structural particles from which one of the plurality of nanoscale passivating particles was removed;

    wherein at least one of the patterning and the depositing is at least partially automated.

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