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Methods for improving integration performance of low stress CDO films

  • US 7,326,444 B1
  • Filed: 09/14/2004
  • Issued: 02/05/2008
  • Est. Priority Date: 09/14/2004
  • Status: Active Grant
First Claim
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1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:

  • (a) providing the substrate to a deposition chamber; and

    (b) contacting the substrate with one or more CDO precursors having a carbon-carbon triple bond and with an oxidizer under process conditions whereby the CDO film is formed on the substrate, and whereby the CDO film contains carbon-carbon triple bonds and their derivative bonds;

    whereinthe substrate is contacted with one or more CDO precursors having a carbon-carbon triple bond and an oxidizer in a dual frequency plasma enhanced deposition process such that CDO film has carbon-carbon triple bonds or their derivative forms in sufficient amounts that the CDO film has a compressive stress or a tensile stress of between about −

    20 to 30 MPa and a dielectric constant of between about 2.5-3.0 has a cracking threshold of at least 3 um; and

    whereinthe oxidizer is selected from the group consisting of O2, N2O, H2O, O3, H2O2, and combinations thereof.

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