Methods for improving integration performance of low stress CDO films
First Claim
1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:
- (a) providing the substrate to a deposition chamber; and
(b) contacting the substrate with one or more CDO precursors having a carbon-carbon triple bond and with an oxidizer under process conditions whereby the CDO film is formed on the substrate, and whereby the CDO film contains carbon-carbon triple bonds and their derivative bonds;
whereinthe substrate is contacted with one or more CDO precursors having a carbon-carbon triple bond and an oxidizer in a dual frequency plasma enhanced deposition process such that CDO film has carbon-carbon triple bonds or their derivative forms in sufficient amounts that the CDO film has a compressive stress or a tensile stress of between about −
20 to 30 MPa and a dielectric constant of between about 2.5-3.0 has a cracking threshold of at least 3 um; and
whereinthe oxidizer is selected from the group consisting of O2, N2O, H2O, O3, H2O2, and combinations thereof.
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Abstract
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3) and low residual stress without sacrificing important integration properties such as dry etch rate, film stability during wet cleaning, electrical leakage current, and extinction coefficient are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with at least one carbon-carbon triple bond, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a compressive stress or a tensile stress of between about −20 to 30 MPa and a dielectric constant of between about 2.5-3.0, a C≡C to SiO bond ratio of between about 0.05% to 5%, a SiC to SiO bond ratio of between about 2% to 10%, and a refractive index (RI) of 1.39-1.52 measured at 633 nm.
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Citations
29 Claims
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1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:
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(a) providing the substrate to a deposition chamber; and (b) contacting the substrate with one or more CDO precursors having a carbon-carbon triple bond and with an oxidizer under process conditions whereby the CDO film is formed on the substrate, and whereby the CDO film contains carbon-carbon triple bonds and their derivative bonds;
whereinthe substrate is contacted with one or more CDO precursors having a carbon-carbon triple bond and an oxidizer in a dual frequency plasma enhanced deposition process such that CDO film has carbon-carbon triple bonds or their derivative forms in sufficient amounts that the CDO film has a compressive stress or a tensile stress of between about −
20 to 30 MPa and a dielectric constant of between about 2.5-3.0 has a cracking threshold of at least 3 um; and
whereinthe oxidizer is selected from the group consisting of O2, N2O, H2O, O3, H2O2, and combinations thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification