Gettering using voids formed by surface transformation
First Claim
1. A method for forming a transistor, comprising:
- forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a precise arrangement of precisely-formed voids to getter impurities from the crystalline semiconductor region;
forming a gate dielectric over the crystalline semiconductor region;
forming a gate over the gate dielectric; and
forming a first diffusion region and a second diffusion region in the crystalline semiconductor region, the first and second diffusion regions being separated by a channel region formed in the crystalline semiconductor region between the gate and the proximity gettering region.
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Accused Products
Abstract
One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is annealed such that the wafer undergoes a surface transformation to transform the arrangement of the plurality of holes into a predetermined arrangement of at least one empty space of a predetermined size within the wafer to form the gettering site. One aspect relates to a semiconductor wafer. In various embodiments, the wafer includes at least one device region, and at least one gettering region located proximate to the at least one device region. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids that are formed within the wafer using a surface transformation process. Other aspects and embodiments are provided herein.
139 Citations
27 Claims
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1. A method for forming a transistor, comprising:
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forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a precise arrangement of precisely-formed voids to getter impurities from the crystalline semiconductor region; forming a gate dielectric over the crystalline semiconductor region; forming a gate over the gate dielectric; and forming a first diffusion region and a second diffusion region in the crystalline semiconductor region, the first and second diffusion regions being separated by a channel region formed in the crystalline semiconductor region between the gate and the proximity gettering region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for forming a semiconductor structure, comprising:
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forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a predetermined arrangement of precisely-formed voids to getter impurities from the crystalline semiconductor region; and performing semiconductor fabrication processes in the crystalline semiconductor region to form a semiconductor device proximate to the gettering region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for forming a transistor, comprising:
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forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a precise arrangement of sphere-shaped voids to getter impurities from the crystalline semiconductor region, wherein forming a proximity gettering region includes; forming a predetermined arrangement of a plurality of holes in the wafer through a surface of the wafer; and annealing the wafer to transform the predetermined arrangement of the plurality of holes into the arrangement of sphere-shaped voids to form the proximity gettering region in the wafer; forming a gate dielectric over the crystalline semiconductor region; forming a gate over the gate dielectric; and forming a first diffusion region and a second diffusion region in the crystalline semiconductor region, the first and second diffusion regions being separated by a channel region formed in the crystalline semiconductor region between the gate and the proximity gettering region. - View Dependent Claims (14, 15, 16)
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17. A method for forming a transistor, comprising:
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forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a precise arrangement of pipe-shaped voids to getter impurities from the crystalline semiconductor region, wherein forming a proximity gettering region includes; forming a predetermined arrangement of a plurality of holes in the wafer through a surface of the wafer; and annealing the wafer to transform the predetermined arrangement of the plurality of holes into the arrangement of pipe-shaped voids to form the proximity gettering region in the wafer; forming a gate dielectric over the crystalline semiconductor region; forming a gate over the gate dielectric; and forming a first diffusion region and a second diffusion region in the crystalline semiconductor region, the first and second diffusion regions being separated by a channel region formed in the crystalline semiconductor region between the gate and the proximity gettering region. - View Dependent Claims (18, 19, 20)
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21. A method for forming a transistor, comprising:
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forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a precise arrangement of plate-shaped voids to getter impurities from the crystalline semiconductor region, wherein forming a proximity gettering region includes; forming a predetermined arrangement of a plurality of holes in the wafer through a surface of the wafer; and annealing the wafer to transform the predetermined arrangement of the plurality of holes into the arrangement of plate-shaped voids to form the proximity gettering region in the wafer; forming a gate dielectric over the crystalline semiconductor region; forming a gate over the gate dielectric; and forming a first diffusion region and a second diffusion region in the crystalline semiconductor region, the first and second diffusion regions being separated by a channel region formed in the crystalline semiconductor region between the gate and the proximity gettering region. - View Dependent Claims (22, 23, 24)
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25. A method for forming a transistor, comprising:
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forming a proximity gettering region to be proximate to a crystalline semiconductor region in a wafer, the proximity gettering region including a precise arrangement of voids to getter impurities from the crystalline semiconductor region, wherein forming a proximity gettering region includes; forming a predetermined arrangement of a plurality of holes in the wafer through a surface of the wafer, including forming each of the plurality of holes with a predetermined length and a predetermined diameter; and annealing the wafer to transform the predetermined arrangement of the plurality of holes with the predetermined length and the predetermined diameter into the arrangement of voids determined by the length and the diameter of the holes to form the proximity gettering region in the wafer; forming a gate dielectric over the crystalline semiconductor region; forming a gate over the gate dielectric; and forming a first diffusion region and a second diffusion region in the crystalline semiconductor region, the first and second diffusion regions being separated by a channel region formed in the crystalline semiconductor region between the gate and the proximity gettering region. - View Dependent Claims (26, 27)
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Specification