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Trench structure having a void and inductor including the trench structure

  • US 7,326,625 B2
  • Filed: 02/07/2005
  • Issued: 02/05/2008
  • Est. Priority Date: 02/09/2004
  • Status: Active Grant
First Claim
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1. A method of forming a trench structure comprising:

  • forming a deep trench having a first width and a first depth on a substrate, wherein forming the deep trench comprises;

    forming a pad oxide layer pattern on the substrate;

    forming a first nitride layer pattern on the pad oxide layer pattern;

    forming a first oxide layer pattern on the first nitride layer pattern;

    partially etching the substrate using the first oxide layer pattern, the first nitride layer pattern and the pad oxide layer pattern as etching masks; and

    removing the first oxide layer pattern;

    forming an enclosed void in the deep trench by filling the deep trench with a first insulation layer pattern in a manner that defines the enclosed void in the deep trench,wherein forming the enclosed void in the deep trench comprises;

    forming a second oxide layer pattern on a sidewall of the deep trench;

    forming a second nitride layer pattern on the second oxide layer pattern to form an opening in the deep trench; and

    forming a third oxide layer pattern on the second nitride layer pattern to complete the enclosed void by covering a top portion of the opening;

    forming a shallow trench on the deep trench, the shallow trench having a second width substantially wider than the first width and a second depth substantially shallower than the first depth; and

    filling up the shallow trench with a second insulation layer pattern.

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