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Nitride-based light emitting heterostructure

  • US 7,326,963 B2
  • Filed: 12/02/2005
  • Issued: 02/05/2008
  • Est. Priority Date: 12/06/2004
  • Status: Active Grant
First Claim
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1. A nitride-based light emitting heterostructure comprising:

  • an electron supply layer;

    a hole supply layer; and

    a light generating structure disposed between the electron supply layer and the hole supply layer, the light generating structure including;

    a set of barrier layers, each barrier layer comprising a graded composition; and

    a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of a defect responsible for nonradiative recombination, wherein the graded composition of each barrier layer causes electrons to lose energy prior to entering a quantum well.

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