Nitride-based light emitting heterostructure
First Claim
1. A nitride-based light emitting heterostructure comprising:
- an electron supply layer;
a hole supply layer; and
a light generating structure disposed between the electron supply layer and the hole supply layer, the light generating structure including;
a set of barrier layers, each barrier layer comprising a graded composition; and
a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of a defect responsible for nonradiative recombination, wherein the graded composition of each barrier layer causes electrons to lose energy prior to entering a quantum well.
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Abstract
An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
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Citations
21 Claims
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1. A nitride-based light emitting heterostructure comprising:
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an electron supply layer; a hole supply layer; and a light generating structure disposed between the electron supply layer and the hole supply layer, the light generating structure including; a set of barrier layers, each barrier layer comprising a graded composition; and a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of a defect responsible for nonradiative recombination, wherein the graded composition of each barrier layer causes electrons to lose energy prior to entering a quantum well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 21)
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19. A nitride-based light emitting device comprising:
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a substrate; a buffer layer on the substrate; a strain-relieving structure over the buffer layer; an electron supply layer over the strain-relieving structure; a hole supply layer; and a light generating structure disposed between the electron supply layer and the hole supply layer, the light generating structure including; a set of barrier layers, each barrier layer comprising a graded composition; and a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of at least one defect responsible for nonradiative recombination. - View Dependent Claims (20)
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Specification