Silicide-silicon oxide-semiconductor antifuse device and method of making
First Claim
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1. A method of making an antifuse comprising:
- forming a first silicide layer over a substrate, wherein the first silicide layer comprises a first cobalt silicide layer;
growing an insulating antifuse layer on a first surface of the first silicide layer by converting a portion of the first silicide layer to the insulating antifuse layer; and
forming a first semiconductor layer on the insulating antifuse layer.
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Abstract
An antifuse contains a first silicide layer, a grown silicon oxide antifuse layer on a first surface of the first silicide layer, and a first semiconductor layer having a first surface in contact with the antifuse layer.
145 Citations
19 Claims
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1. A method of making an antifuse comprising:
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forming a first silicide layer over a substrate, wherein the first silicide layer comprises a first cobalt silicide layer; growing an insulating antifuse layer on a first surface of the first silicide layer by converting a portion of the first silicide layer to the insulating antifuse layer; and forming a first semiconductor layer on the insulating antifuse layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of making an antifuse comprising:
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forming a first silicide layer over a substrate wherein the first silicide layer comprises a first cobalt silicide layer; growing a silicon oxide antifuse layer on a first surface of the first silicide layer by oxidizing a surface of the first silicide layer; and forming a first semiconductor layer on the silicon oxide antifuse layer. - View Dependent Claims (17, 18, 19)
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Specification