Method of processing a substrate

• US 7,329,608 B2
• Filed: 11/05/2004
• Issued: 02/12/2008
• Est. Priority Date: 05/14/1999
• Status: Expired due to Term

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Babayan, Steven E., Hicks, Robert F.
• Primary Examiner(s): Norton; Nadine G.
• Assistant Examiner(s): ANGADI, MAKI A
• Application Number:
  US10/982,120
• Publication Number:
  US 20050093458A1
• Time in Patent Office: 1,194 Days
• Field of Search: 438/689, 156/345.45, 118/723, 427/535
• US Class Current: 438/689
• CPC Class Codes: H01L 23/08 the material being an electrical insulator, e.g. glass
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16195 Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 71/851 Division of substrate

Abstract

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.

Claims

1. A method for processing a substrate, comprising:

(a) constraining a gas flow in a housing at a pressure of about atmospheric pressure;

(b) coupling a signal generator to a first electrode that is electrically isolated from a second electrode, wherein the first and second electrodes have at least one perforation and are affixed to the housing so as to require substantially all the gas flow to pass between the first and second electrodes;

(c) exciting the gas flow to create a plasma between the first and second electrodes; and

(d) placing a substrate downstream of the electrodes, wherein the substrate is contacted by a substantially uniform flux of at least one reactive species generated by the plasma.

2. The method of claim 1, wherein the gas comprises a mixture of an inert gas and a molecular gas.

3. The method of claim 2, wherein the mixture comprises a flux substantially free of ionic species downstream of the first and second electrodes.

4. The method of claim 1, wherein the electrodes are spaced apart so as to create a gap between 0.1 and 20.0 mm.

5. The method of claim 1, wherein the substrate is placed downstream of the electrodes at a distance substantially between 1.0 to 20.0 mm.

6. The method of claim 1, wherein the plasma is created at temperatures below 250 degrees centigrade.

7. The method of claim 1, wherein the substrate has a shape of a substantially circular disk, square, rectangle or polygon.

8. The method of claim 1, wherein the substrate is a large sheet that passes beneath the electrodes.

9. The method of claim 1, wherein the first electrode is substantially concentric with the second electrode, and the plasma generated therebetween is directed in an inward direction towards the substrate.

10. The method of claim 9, wherein the substrate is a wire, thread, fiber, pipe, tube or rod.

11. The method of claim 1, wherein the first electrode is substantially concentric with the second electrode, and the plasma generated therebetween is directed in an outward direction towards the substrate.

12. The method of claim 11, wherein the substrate is a pipe, tube or cylinder.

13. The method of claim 1, wherein the plasma emits at least one reactive species that etches the substrate.

14. The method of claim 1, wherein the plasma emits at least one reactive species that cleans the substrate.

15. The method of claim 1, wherein the plasma emits at least one reactive species that when combined with a chemical precursor deposits material on the substrate.

16. The method of claim 1, wherein the plasma emits at least one reactive species that sterilizes the substrate.

17. The method of claim 1, wherein the plasma emits at least one reactive species that activates a surface of the substrate.

18. The method of claim 2, wherein the inert gas is helium or argon.

19. The method of claim 2, wherein the molecular gas contains elements selected from a group comprising hydrogen, carbon, nitrogen, oxygen, fluorine, phosphorus, sulfur, chlorine, and arsenic.

20. The method of claim 1, wherein the signal generator is a radio frequency generator.

21. A method comprising:

operating a plasma flow device;

the plasma flow device having

a) a housing, configured to receive and constrain a gas flow, wherein the housing includes a gas inlet,

b) a first electrode having at least one perforation,

c) a second electrode having at least one perforation, the second electrode being spaced apart from the first electrode and being electrically insulated therefrom,

d) the first and second electrodes being sized and affixed relative to the housing so as to require substantially all the gas flow to pass through the first and second electrodes, and

e) a signal generator, coupled to at least one of the first electrode or second electrode, and

f) an outlet opening out of the device;

operating the device to create a plasma with a pressure of about atmospheric pressure between the first electrode and the second electrode; and

passing a plasma effluent from the second electrode through the outlet.

22. The method of claim 21, wherein operating the device comprises exciting ions in the gas flow to create the plasma having a temperature below 250 degrees centigrade.

23. The method of claim 21, further comprising:

combining a chemical precursor with the plasma effluent; and

depositing material onto a substrate.

24. The method of claim 21, further comprising etching a substrate with the plasma effluent.

25. The method of claim 21, further comprising cleaning a substrate with the plasma effluent.

26. The method of claim 21, further comprising sterilizing a substrate with the plasma effluent.

27. The method of claim 21, further comprising surface activating a substrate with the plasma effluent.

28. The method of claim 21, further comprising:

introducing gas molecules into the gas flow; and

producing a reactive species from the gas molecules.

29. The method of claim 21, further comprising:

introducing oxygen molecules into the gas flow; and

producing a reactive species from the oxygen molecules.

30. The method of claim 21, further comprising introducing an inert gas into the gas flow.

31. The method of claim 21, further comprising operating the device without an attached substrate processing chamber.

32. The method of claim 21, further comprising directing the plasma effluent onto a substrate that is not contained within a processing chamber.