Rectifying contact to an n-type oxide material or a substantially insulating oxide material
First Claim
Patent Images
1. A rectifying contact, comprising:
- a p-type oxide material electrically coupled to at least one of an n-type oxide material or a substantially insulating oxide material, the p-type oxide material including;
a copper species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material; and
a metal species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof.
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Accused Products
Abstract
A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.
22 Citations
35 Claims
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1. A rectifying contact, comprising:
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a p-type oxide material electrically coupled to at least one of an n-type oxide material or a substantially insulating oxide material, the p-type oxide material including; a copper species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material; and a metal species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A rectifying contact, comprising:
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a p-type oxide material electrically coupled to at least one of an n-type oxide material or a substantially insulating oxide material, the p-type oxide material including; a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof; wherein the rectifying contact exhibits a forward-to-reverse current ratio of greater than about 10. - View Dependent Claims (11, 12)
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13. A p-type oxide material, comprising:
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a copper species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material; and a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material; wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A diode, comprising:
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an n-type oxide material; and a p-type oxide material established in electrical contact with the n-type oxide material, the p-type oxide material including a copper species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, and a metal species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, the metal species selected from zinc, tin, and combinations thereof; wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material selected from the n-type oxide material and a substantially insulating oxide material. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A diode, comprising:
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an n-type oxide material; a p-type oxide material established in electrical contact with the n-type oxide material, the p-type oxide material including a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, and a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from zinc, tin, and combinations thereof; and a substantially insulating oxide material positioned between the n-type oxide material and the p-type oxide material; wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material selected from the n-type oxide material and the substantially insulating oxide material. - View Dependent Claims (28)
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29. A diode, comprising:
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an n-type oxide material, wherein the n-type oxide material is indium tin oxide; a p-type oxide material established in electrical contact with the n-type oxide material, the p-type oxide material including a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, and a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from zinc, tin, and combinations thereof; and a zinc tin oxide material positioned between the indium tin oxide and the p-type oxide material; wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material selected from the indium tin oxide and the zinc tin oxide.
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30. A diode, comprising:
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an n-type oxide material; and a p-type oxide material established in electrical contact with the n-type oxide material, the p-type oxide material including a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, and a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from zinc, tin, and combinations thereof; wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material selected from the n-type oxide material and a substantially insulating oxide material, and wherein the diode exhibits a forward-to-reverse current ratio greater than about 10. - View Dependent Claims (31)
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32. A rectifying contact, comprising:
a p-type oxide material electrically coupled to an n-type oxide material, thereby forming a p-n junction, the p-type oxide material including; a copper species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material; and a metal species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof.
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33. A rectifying contact, comprising:
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a p-type oxide material electrically coupled to an n-type oxide material, the p-type oxide material including; a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof; and a substantially insulating oxide material disposed between the p-type oxide material and the n-type oxide material, thereby forming a p-i-n junction.
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34. A diode, comprising:
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an n-type oxide material; and means for providing rectifying contacts to the n-type oxide material, the means including a copper species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the rectifying contacts means, and a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the rectifying contacts means. - View Dependent Claims (35)
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Specification