Permeable capacitor electrode
First Claim
1. A capacitive structure comprising:
- a semiconductor substrate, wherein the substrate comprises an inter layer dielectric layer formed of borophosphosilicate glass (BPSG) that is formed on the substrate;
a first electrode formed adjacent the substrate, wherein the first electrode is formed so that at least portions of the first electrode are permeable to etching so as to allow etching of regions of the substrate adjacent the first electrode;
a dielectric layer formed adjacent the first electrode; and
a second electrode adjacent the dielectric layer such that the first and second electrode define two separate plates of the capacitive structure.
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Accused Products
Abstract
The present teachings describe a container capacitor that utilizes an etchant permeable lower electrode for the formation of single or double-sided capacitors without excessive etching back of the periphery of the use of sacrificial spacers. The present teachings further describe a method of forming at least one capacitor structure on a substrate. For example, the method comprises forming at least one recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the at least one recess, and defining at least one lower electrode within the at least one recess formed in the substrate by removing at least a portion of the first conductive layer. The method further comprises diffusing an etchant through the at least one lower electrode so as to remove at least a portion of the substrate to thereby at least partially isolate the at least one lower electrode. The method still further comprises depositing a dielectric layer on the at least one isolated lower electrode and depositing a second conductive layer on the dielectric layer so as to form an upper electrode.
27 Citations
16 Claims
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1. A capacitive structure comprising:
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a semiconductor substrate, wherein the substrate comprises an inter layer dielectric layer formed of borophosphosilicate glass (BPSG) that is formed on the substrate; a first electrode formed adjacent the substrate, wherein the first electrode is formed so that at least portions of the first electrode are permeable to etching so as to allow etching of regions of the substrate adjacent the first electrode; a dielectric layer formed adjacent the first electrode; and a second electrode adjacent the dielectric layer such that the first and second electrode define two separate plates of the capacitive structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An assembly of a plurality of capacitive structures comprising:
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an insulating layer, wherein the insulating layer comprises an inter layer dielectric layer formed of borophosphosilicate glass (BPSG) that is formed on a semiconductor substrate; a plurality of first electrodes positioned in the insulating layer, wherein the plurality of first electrodes are formed so as to permit etching of the insulating layer surrounding the plurality of first electrodes; a plurality of dielectric layers respectively positioned adjacent the plurality of first electrodes; a plurality of second electrodes respectively positioned adjacent he plurality of first electrodes so as to form the plurality of capacitive structures. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification