Model and parameter selection for optical metrology

• US 7,330,279 B2
• Filed: 07/25/2002
• Issued: 02/12/2008
• Est. Priority Date: 07/25/2002
• Status: Active Grant

• Current Assignee: Tokyo Electron America Incorporated (Tokyo Electron Limited)
• Original Assignee: Timbre Technologies Incorporated (Tokyo Electron Limited)
• Inventors: Vuong, Vi, Bao, Junwei, Drege, Emmanuel, Jakatdar, Nickhil, Doddi, Srinivas, Niu, Xinhui
• Primary Examiner(s): Toatley, Jr.; Gregory J.
• Assistant Examiner(s): Stock, Jr.; Gordon J.
• Application Number:
  US10/206,491
• Publication Number:
  US 20040017574A1
• Time in Patent Office: 2,028 Days
• Field of Search: 356/2, 356388-398, 356625-640, 356399-401, 353/5, 353/26, 378/29, 378/26, 703/2, 703/13, 716/1, 716/4, 716 19- 21, 438/5, 438 7- 9, 438/14, 438/16, 700/95, 700/97, 700/98, 700/103, 700117-121, 700/2, 700/13, 702/81, 702/82, 702/117, 702155-159, 702166-170, 702/189, 25055901-55907, 25055919-55924, 250/559.26, 250/559.27, 250/559.11, 250/548, 355/53, 355/55, 355/77, 430/5, 430/22, 430/30
• US Class Current: 356/625
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.

Claims

1. A method of selecting a profile model and selecting parameters of the profile model for use in optical metrology of structures in a wafer, the method comprising:

a) setting one or more termination criteria;

b) setting one or more parameter selection criteria;

c) selecting a profile model for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure;

d) selecting a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) testing the selected profile model and the set of optimization parameters against the one or more termination criteria; and

f) performing the steps c, d, and e until the one or more termination criteria are met.

2. The method of claim 1 wherein testing the selected profile model and the set of optimization parameters against the one or more termination criteria includes:

testing if a simulated diffraction signal cost function value is less than or equal to a preset cost function value, the simulated diffraction cost function value calculated by comparing an optimized simulated diffraction signal to a measured diffraction signal.

3. The method of claim 1 wherein testing the selected profile model and the set of optimization parameters against the one or more termination criteria includes:

testing if a simulated diffraction signal goodness of fit value is equal to or greater than a preset goodness of fit value, the simulated diffraction signal goodness of fit value calculated by comparing an optimized simulated diffraction signal to a measured diffraction signal.

4. The method of claim 1 wherein testing the selected profile model and the set of optimization parameters against the one or more termination criteria includes:

testing if one or more calculated confidence interval values are less than or equal to corresponding preset confidence interval values, the confidence interval being a range of values of an optimization parameter within which the actual value is expected to fall with a specified probability.

5. The method of claim 1 wherein testing the selected profile model and the set of optimization parameters against the one or more termination criteria includes:

testing if a simulated diffraction signal cost function value is less than or equal to a preset cost function value, the simulated diffraction cost function value calculated by comparing an optimized simulated diffraction signal to a measured diffraction signal; and

testing if the simulated diffraction signal goodness of fit value is equal to or greater than a preset goodness of fit value, the simulated diffraction signal goodness of fit value calculated by comparing the best match simulated diffraction signal to the measured diffraction signal.

6. The method of claim 5 wherein testing the selected profile model and the set of optimization parameters against the one or more termination criteria flax-that includes:

testing if one or more calculated confidence interval values are less than or equal to corresponding preset confidence interval values, the confidence interval being a range of values of an optimization parameter within which the actual value is expected to fail with a specified probability.

7. The method of claim 1 wherein the one or more parameter selection criteria comprise:

a correlation cutoff, the correlation cutoff being a correlation coefficient between an optimization parameter and another optimization parameter of the profile model.

8. The method of claim 1 wherein the one or more parameter selection criteria comprise:

a sensitivity threshold of an optimization parameter, the sensitivity threshold being the sum-squared-error of a first simulated diffraction signal calculated using nominal values for all the optimization parameters compared to a second simulated diffraction signal calculated using an adjusted value of the optimization parameter and nominal values for all the other optimization parameters, the adjusted value of the parameter being the nominal values plus or minus an increment.

9. The method of claim 1 wherein the one or more parameter selection criteria comprise:

a confidence interval threshold of an optimization parameter, the confidence interval threshold being the amount of change from the nominal value of an optimization parameter that results in a change in the simulated diffraction signal greater than a measured or simulated noise level for the optimization parameter, the rest of the optimization parameters being held constant at respective nominal values.

10. The method of claim 1 wherein the one or more parameter selection criteria comprise:

a correlation cutoff, the correlation cutoff being a correlation coefficient between an optimization parameter and another optimization parameter of the profile model;

a sensitivity threshold of an optimization parameter, the sensitivity threshold being the sum-squared-error of a first simulated diffraction signal calculated using nominal values for all the optimization parameters compared to a second simulated diffraction signal calculated using an adjusted value of the optimization parameter and nominal values for all the other optimization parameters, the adjusted value of the parameter being the nominal values plus or minus an increment; and

a confidence interval threshold of an optimization parameter, the confidence interval threshold being the amount of change from the nominal value of an optimization parameter that results in a change in the simulated diffraction signal greater than a measured or simulated noise level for the optimization parameter, the rest of the optimization parameters being held constant at respective nominal values.

11. The method of claim 1 wherein selecting the profile model for use in optical metrology of the structure in the wafer further comprises:

obtaining structure characterization;

selecting measured diffraction signals for profile model and parameter processing; and

creating a profile model of the structure using the structure characterization,

wherein the structure having a layer stack, the layer stack having one or more layers, structure characterization includes layer stack information about the structure, each layer stack information comprising material of layer, pitch of repeating structures, line-to-space ratio of repeating structures, and optical microscopy data.

12. The method of claim 11 wherein selecting measured diffraction signals for profile model and parameter processing comprises:

categorizing input measured diffraction signals into groups; and

selecting a representative measured diffraction signal from each group of categorized input measured diffraction signals.

13. The method of claim 12 wherein categorizing input measured diffraction signals into groups involves clustering and/or correlation techniques.

14. The method of claim 11 wherein creating the profile model of the structure using the structure characterization further comprises;

determining one or more types of geometric shapes for each material in the layer stack;

generating the types of geometric shapes and associated geometric parameters for each geometric shape for all layers of the layer stack;

obtaining nominal values and ranges of the geometric parameters, the ranges of the geometric parameters being the probable low and high values of the geometric parameters;

defining dependencies of the geometric parameters; and

converting the geometric parameters into optimization parameters.

15. The method of claim 14 wherein the geometric shapes comprise rectangles and/or trapezoids.

16. The method of claim 14 wherein defining dependencies of the geometric parameters include:

expressing a geometric parameter as a function of another geometric parameter, as a function of a variable, as a constant, or as a function of another geometric parameter and/or a variable plus or minus an offset,

wherein the offset may be a constant or another variable.

17. The method of claim 14 wherein converting the geometric parameters into optimization parameters comprises:

translating the dependencies of the geometric parameters into equations; and

performing mathematical operations on the equations that reduce the number of independent variables, the independent variables being the optimization parameters used for the parameter selection process.

18. The method of claim 1 wherein selecting the set of parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria further comprises:

selecting wavelengths for optical metrology;

calculating values of the one or more parameter selection criteria;

selecting optimization parameters that meet the one or more parameter selection criteria; and

performing a procedure to determine an optimized simulation diffraction signal corresponding to a measured diffraction signs of the one or more input measured diffraction signals using the selected optimization parameters of the profile model.

19. The method of claim 18 wherein selecting wavelengths for optical metrology comprises:

selecting wavelengths that meet a noise level criteria, the noise level being the standard deviation of diffraction signals off the same site in a wafer; and

selecting wavelengths that have low correlation of diffraction signals compared to diffraction signals of other wavelengths.

20. The method of claim 18 wherein selecting optimization parameters that meet the one or more parameter selection criteria includes:

selecting optimization parameters that meet a correlation cutoff, the correlation cutoff being a preset correlation coefficient value of simulated diffraction signals between an optimization parameter and another optimization parameter of the profile model.

21. The method of claim 18 wherein selecting optimization parameters that meet the one or more parameter selection criteria includes:

selecting optimization parameters that meet a sensitivity threshold of an optimization parameter, the sensitivity threshold being the sum-squared-error of a first simulated diffraction signal calculated using nominal values for all the optimization parameters compared to a second simulated diffraction signal calculated using an adjusted value of the optimization parameter and nominal values for all the other Optimization parameters, the adjusted value of the optimization parameter being the nominal value plus or minus an increment.

22. The method of claim 18 wherein selecting optimization parameters that meet the one or more parameter selection criteria includes:

selecting optimization parameters that meet a confidence interval threshold, the confidence interval threshold being the amount of change from the nominal value of an optimization parameter that results in a change in the simulated diffraction signal greater than a measured or simulated noise level for the optimization parameter, the rest of the optimization parameters being held constant at respective nominal values.

23. The method of claim 18 wherein performing the procedure to determine the optimized simulation diffraction signal corresponding to the measured diffraction signal using the selected optimization parameters of the profile model further comprises:

utilizing an optimization procedure to find the simulation diffraction signal that yields the least error compared to the measured diffraction signal.

24. The method of claim 23 wherein the optimization procedure utilizes one or more global optimization techniques including branch-and-bound technique, simulated annealing, genetic algorithm, other global optimization technique or hybrid global and local optimization technique.

25. The method of claim 1 further comprising:

saving into a data store identification data associated with the structure, the wafer, and the selected model and data about the termination criteria, the one or more parameter selection criteria, and the selected optimization parameters.

26. A method of determining wafer structure having critical dimensions, profile shape, and film thickness using optical metrology, the method comprising:

a) setting one or more termination criteria;

b) setting one or more parameter selection criteria;

c) selecting a profile mode!for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure, the profile model having critical dimensions, profile shape, and film thickness;

d) selecting a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) testing the selected profile model and the set of optimization parameters against the one or more termination criteria;

f) performing the steps c, d, and e until the one or more termination criteria are met; and

g) assessing critical dimensions, profile shape, and film thickness associated with the selected profile model and selected optimization parameters of the selected profile model.

27. The method of claim 26 further comprising:

displaying critical dimensions, profile shape, and film thickness associated with the one or more diffraction signal.

28. A method of creating a library of optical metrology signals and associated profiles for structures in a wafer, the method comprising:

a) setting one or more termination criteria;

b) setting one or more parameter selection criteria;

c) selecting a profile model for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure, the profile model having critical dimensions, profile shape, and film thickness;

d) selecting a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) testing the selected profile model and the set of optimization parameters against the one or more termination criteria;

f) performing the steps c, d, and e until the one or more termination criteria are met;

g) assessing critical dimensions, profile shape, and film thickness associated with the selected profile model and selected optimization parameters of the selected profile model; and

h) creating a library of diffraction signals and associated profile data using the selected optimization parameters of the selected profile model.

29. A system for processing optical metrology data for wafer structures, the system comprising:

a model generator configured to generate a profile model for a structure in a wafer using characterizations of the structure and to process one or more termination criteria and one or more parameter selection criteria;

an optical metrology simulator configured to use the profile model and selected optimization parameter values to calculate a simulated diffraction signal;

a parameter selector coupled to the model generator and to the optical metrology simulator, the parameter selector configured to perform calculations of one or more parameter selection criteria values using one or more input measured diffraction signals, to compare the calculated one or more parameter selection criteria values to the one or more parameter selection criteria, and to select optimization parameters that meet the one or more parameter selection criteria, wherein the optimization parameters are converted from a set of geometric parameters, and wherein the number of optimization parameters is less than the number of geometric parameters within the set of geometric parameters; and

a profile model tester coupled to the parameter selector, the profile model tester configured to perform calculations of termination values, to compare the calculated termination values to the one or more termination criteria, and to adjust the profile model if the one or more termination criteria are not met.

30. The system of claim 29 further comprising:

a profile compiler coupled to the optical metrology simulator, to the model generator, and to the profile model tester, the profile compiler configured to process input data including characterizations of the wafer structure, wafer fabrication process, wafer layer stack, design nominal dimensions of wafer structure, and expected ranges of dimensions of the wafer structures.

31. The system of claim 29 further comprising:

a data store coupled to the profile model tester, the data store configured to store identification data associated with the structure, the wafer, and the selected model and data about the termination criteria, the one or more parameter selection criteria, and the selected optimization parameters.

32. The system of claim 29 further comprising:

a library generator coupled to the profile model tester and the optical metrology simulator, the library generator configured to utilize structure profile data from the profile model tester and invoke the optical metrology simulator to calculate simulated diffraction signals.

33. The system of claim 29 further comprising:

a library coupled to the library generator, the library configured to contain diffraction signals and associated structure profile data.

34. The system of claim 29 wherein the profile model tester further comprises:

one or more optimization engines configured to utilize one or more global optimization algorithms including branch-and-bound technique, simulated annealing, genetic algorithm, other global optimization technique or hybrid global and local optimization technique.

35. The system of claim 29 further comprising:

a terminal coupled to the profile compiler and to the model generator, the terminal configured to;

accept input data including characterizations of the wafer structure, wafer fabrication process, wafer layer stack, design nominal dimensions of wafer structure, expected ranges of dimensions of the wafer structures; and

accept specification of geometric shapes for profile models and dependencies of parameters of the geometric shapes.

36. The system of claim 35 further comprising:

a critical dimension server coupled to the parameter selector, the critical dimension server configured to display structure data including critical dimensions, structure profile, and film thickness corresponding to measured diffraction signals.

37. The system of claim 36 wherein the critical dimension server comprises one or more remote computer devices.

38. The system of claim 36 wherein the terminal and the critical dimension server reside in a single remote computer system.

39. A wafer structure critical dimension server system comprising:

a metrology model optimizer configured to;

a) set one or more termination criteria;

b) set one or more parameter selection criteria;

c) select a profile model for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure;

d) select a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) test the selected profile model and the set of optimization parameters against the one or more termination criteria; and

f) perform steps c, d, and e until the one or more termination criteria are met; and

a profiler workstation coupled to the metrology model optimizer, the profiler workstation configured to;

a) receive input regarding wafer structure profiles, the metrology model specifications, the one or more termination criteria, and the one or more parameter selection criteria; and

b) display output information comprising critical dimensions, profile shape, and film thickness of the wafer structures.

40. The system of claim 39 wherein the profiler workstation comprises one or more computer systems at remote locations.

41. The system of claim 39 wherein the metrology model optimizer is further configured to:

g) create a library of diffraction signals and associated profile data using the selected optimization parameters of the selected profile model.

42. A system for real-time determination of profile data of wafer structures, the system comprising:

an optical metrology system configured to measure diffraction signals off wafer structures;

a metrology model optimizer coupled to the optical metrology system, the metrology model optimizer configured to;

process characterization of wafer structure profiles, metrology model specifications, one or more termination criteria, and one or more parameter selection criteria;

generate one or more profile models of the wafer structures, the profile models having associated parameters;

select a set of optimization parameters of the profile model using one or more input measured diffraction signals the selected optimization parameters meeting the one or more selection criteria, wherein the optimization parameters are converted from a set of geometric parameters, and wherein the number of optimization parameters is less than the number of geometric parameters within the set of geometric parameters; and

perform the generation of one or more profile models and selection of optimization parameters of the model, the selected optimization parameters meeting the one or more parameter selection criteria until the one or more termination criteria are met;

a profiler workstation coupled to the metrology model optimizer, the profiler workstation configured to;

receive input regarding the wafer structure profiles, the metrology model specifications, the one or more termination criteria, and the one or more parameter selection criteria; and

display output information comprising critical dimensions, profile shape, and film thickness of the wafer structures; and

a data store coupled to the profile model tester, the data store configured to;

store identification data associated with the structure, the wafer, and the selected model and data about the termination criteria, the one or more parameter selection criteria, and the selected optimization parameters.

43. The system of claim 42 further comprising:

a fabrication cluster coupled to the optical metrology system and the metrology model optimizer, the fabrication cluster configured to;

perform one or more processes in the manufacture of wafers and wafer structures.

44. A computer-readable storage medium containing computer executable code to select a profile model for use in integrated circuit optical metrology, comprising instructions for:

a) setting one or more termination criteria;

b) setting one or more parameter selection criteria;

c) selecting a profile model for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure;

d) selecting a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) testing the selected profile model and the set of optimization parameters against the one or more termination criteria; and

f) performing the steps c, d, and e until the one or more termination criteria arc met.

45. The computer storage medium of claim 44 wherein selecting the profile model for use in optical metrology of the structure in the wafer further comprises instructions for:

obtaining structure characterization; and

creating a profile model of the structure using the structure characterization,

wherein the structure characterization includes layer stack information about the structure, each layer of the layer stack being made of a material, pitch of repeating structures, line-to-space ratio of repeating structures, and optical microscopy data.

46. The computer storage medium of claim 44 wherein creating the profile model of the structure using the structure characterization further comprises instructions for:

determining one or more types of geometric shapes for each material in the layer stack;

generating the types of geometric shapes and associated geometric parameters for each geometric shape for all layers of the layer stack;

obtaining nominal values and ranges of the geometric parameters, the ranges of the geometric parameters being the probable low and high values of the geometric parameters;

defining dependencies of the geometric parameters; and

converting the geometric parameters into optimization parameters.

47. The computer storage medium of claim 44 wherein selecting the set of parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria further comprises instructions for:

selecting wavelengths for optical metrology;

calculating values of the one or more parameter selection criteria;

selecting optimization parameters that meet the one or more parameter selection criteria; and

performing a procedure to determine an optimized simulation diffraction signal corresponding to a measured diffraction signal of the one or more input measured diffraction signals using the selected optimization parameters of the profile model.

48. The computer storage medium of claim 47 wherein performing procedure to determine an optimized simulation diffraction signal to a measured diffraction signal using the selected parameters of the profile model further comprises instructions for:

utilizing an optimization procedure to find the simulation diffraction signal that yields the least error compared to the measured diffraction signal.

49. The computer storage medium of claim 44 further comprising instructions for:

saving into a data store identification data associated with the structure, the wafer, and the selected model and data about the termination criteria, the one or more parameter selection criteria, and the selected optimization parameters.

50. A computer-readable storage medium containing computer executable code to select a profile model for use in integrated circuit optical metrology by instructing a computer to operate as follows:

a) setting one or more termination criteria;

b) setting one or more parameter selection criteria;

c) selecting a profile model for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure, the profile model having critical dimensions, profile shape, and film thickness;

d) selecting a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) testing the selected profile model and the set of optimization parameters against the one or more termination criteria;

f) performing the steps c, d, and e until the one or more termination criteria are met; and

g) assessing critical dimensions, profile shape, and film thickness associated with the selected profile model and selected optimization parameters or the selected profile model.

51. A computer-readable storage medium containing computer executable code to select a profile model for use in integrated circuit optical metrology by instructing a computer to operate as follows:

a) setting one or more termination criteria;

b) selling one or more parameter selection criteria;

c) selecting a profile model for use in optical metrology of a structure in a wafer, the profile model having a set of geometric parameters associated with dimensions of the structure, the profile model having critical dimensions, profile shape, and film thickness;

d) selecting a set of optimization parameters for the profile model using one or more input measured diffraction signals and the one or more parameter selection criteria, wherein the set of optimization parameters is converted from the set of geometric parameters, and wherein the number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters;

e) testing the selected profile model and the set of optimization parameters against the one or more termination criteria;

f) performing the steps c, d, and e until the one or more termination criteria are met;

g) assessing critical dimensions, profile shape, and film thickness associated with the selected profile model and selected optimization parameters of the selected profile model; and

h) creating a library of diffraction signals and associated profile data using the selected optimization parameters of the selected profile model.

52. The computer-readable storage medium of claim 51 further comprising stored data including:

identification data associated with a structure, a wafer, a profile model termination criteria data;

one or more parameter selection criteria; and

a selected set of optimization parameters of a system, for selecting a profile model and selecting parameters of the profile model for use in optical metrology of structures in a wafer, wherein the selected optimization parameters are selected using one or more input measured diffraction signals and the one or more parameter selection criteria.