Integrated circuit memory device having delayed write timing based on read response time
DC CAFCFirst Claim
1. An integrated circuit memory device comprising:
- a memory core including a plurality of memory cells;
a pin to receive a clock signal;
a first set of pins to receive, using the clock signal;
a write command to specify that the memory device receive write data and store the write data in the memory core; and
a read command to specify that the memory device output read data accessed from the memory core, wherein the first set of pins receive the read command after the first set of pins receive the write command; and
a second set of pins to receive the write data after a first delay time has transpired from when the write command is received at the first set of pins;
the second set of pins to provide, for each pin of the second set of pins, output of at least two bits of the read data after a second delay time transpires from when the read command is received, wherein the at least two bits of the read data are provided during a clock cycle of the clock signal, wherein the second delay time is based on the first delay time.
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Abstract
An integrated circuit memory device includes a first set of pins and a memory core. The first set of pins receive, using a clock signal, a write command and a read command. Control information is issued internally in response to the write command after a predetermined delay time transpires following receipt of the write command, the control information initiating the write operation in the memory device. A second set of pins output the read data after a first delay time transpires from when the read command is received. Each pin of the second set of pins outputs two bits of read data during a clock cycle of the clock signal. The second set of pins also receive write data after a second delay time has transpired from when the write command is received. The second delay time is based on the first delay time.
150 Citations
28 Claims
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1. An integrated circuit memory device comprising:
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a memory core including a plurality of memory cells; a pin to receive a clock signal; a first set of pins to receive, using the clock signal; a write command to specify that the memory device receive write data and store the write data in the memory core; and a read command to specify that the memory device output read data accessed from the memory core, wherein the first set of pins receive the read command after the first set of pins receive the write command; and a second set of pins to receive the write data after a first delay time has transpired from when the write command is received at the first set of pins;
the second set of pins to provide, for each pin of the second set of pins, output of at least two bits of the read data after a second delay time transpires from when the read command is received, wherein the at least two bits of the read data are provided during a clock cycle of the clock signal, wherein the second delay time is based on the first delay time. - View Dependent Claims (2, 3, 4)
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5. An integrated circuit memory device comprising:
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a memory core including a plurality of memory cells; a pin to receive a clock signal; a first set of pins to receive, using the clock signal; a write command to specify that the memory device receive write data and store the write data in the memory core during a write operation, wherein control information is issued internally in response to the write command after a predetermined delay time transpires following receipt of the write command, the control information initiating the write operation in the memory device; and a read command to specify that the memory device output read data accessed from the memory core, wherein the first set of pins receive the read command after the first set of pins receive the write command; and a second set of pins to output the read data after a first delay time transpires from when the read command is received, wherein each pin of the second set of pins outputs two bits of the read data during a clock cycle of the clock signal, the second set of pins to receive the write data after a second delay time has transpired from when the write command is received at the first set of pins, wherein the second delay time is based on the first delay time. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. An integrated circuit memory device comprising:
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a memory core including a plurality of memory cells; a first set of pins to receive a write command, and to receive a read command after the write command, wherein; the write command specifies that the memory device receive write data, wherein control information is issued internally in response to the write command after a predetermined delay time transpires following receipt of the write command, the control information initiating storage of the write data in the memory core; and the read command specifies that the memory device output read data accessed from the memory core; and a second set of pins to receive the write data after a write delay time has transpired from when the write command is received at the first set of pins, the second set of pins to provide the read data after a read delay time transpires from when the read command is received at the first set of pins, wherein the write delay time is based on the read delay time. - View Dependent Claims (14, 15)
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16. A method of operation of an integrated circuit memory device having a memory core including a plurality of memory cells, the method comprising:
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receiving a sense command that specifies that the memory device activate a row of memory cells of the plurality of memory cells included in the memory core; while receiving the sense command, receiving a row address that identifies the row; receiving a write command that specifies that the memory device receive write data; receiving a read command after receiving the write command; in response to the read command, outputting read data after a read delay time transpires from when the read command is received; receiving the write data after a first write delay time has transpired from when the write command is received, wherein the first write delay time is based on the read delay time; and after a second write delay time transpires from when the write command is received, asserting a control signal, in response to the write command, to cause the write data to be stored in the row. - View Dependent Claims (17, 18, 19, 20)
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21. A method of operating an integrated circuit memory device that receives clock signals and includes a memory core having a plurality of banks, the method comprising:
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providing a sense command to the memory device, wherein the sense command specifies that the memory device activate a row of memory cells in a bank identified by a first bank address; providing a row address to the memory device, wherein the row address identifies the row of memory cells in the bank identified by the first bank address; providing a read command to the memory device after providing the sense command, wherein the read command initiates a read operation such that data is output from the memory device after a first delay time transpires; providing a write command to the memory device after providing the sense command, wherein the write command specifies that the memory device receive write data and store the write data in a row of memory cells in a bank identified by a second bank address, wherein the write command is presented internally within the memory device after a second delay time has transpired from when the write command is received; providing a column address to the memory device, wherein the column address identifies a location within the row of memory cells in the bank identified by the second bank address; and providing the write data to the memory device after a third delay time has transpired after providing the write command, wherein the third delay time is based on the first delay time. - View Dependent Claims (22, 23, 24, 25)
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26. A method of operation of an integrated circuit memory device that includes a memory core having a plurality of memory cells;
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receiving, using a clock signal, a row address at a first set of pins, after receiving the row address, receiving, a column address at the first set of pins; receiving, using the clock signal, a sense command at a second set of pins, wherein the sense command specifies that the memory device activate a row of memory cells of the plurality of memory cells identified by the row address; receiving, using the clock signal, a write command at the second set of pins, wherein the write command specifies that the memory device receive write data and store the write data at a column of the row of memory cells, the column identified by the column address; presenting the write command internally after a first delay time has transpired from when the write command was received; receiving a read command at the second set of pins, wherein the read command specifies a read operation to the memory device; outputting read data from a third set of pins of the memory device after a second delay time transpires from receiving read command; receiving the write data at the third set of pins, after a third delay time has transpired from when the write command was received, wherein the third delay time is based on the second delay time. - View Dependent Claims (27, 28)
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Specification