Dual-mode CMOS imaging sensor with supporting LED

• US 7,332,701 B2
• Filed: 04/22/2003
• Issued: 02/19/2008
• Est. Priority Date: 05/16/2002
• Status: Expired due to Fees

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Van Arendonk, Anton Petrus Maria, Van Veen, Nicolaas Johannes Anthonius
• Primary Examiner(s): Le; Que Tan
• Assistant Examiner(s): Bui-Pho; Pascal M
• Application Number:
  US10/514,287
• Publication Number:
  US 20050224691A1
• Time in Patent Office: 1,764 Days
• Field of Search: 250/208.1, 250/226, 250/221, 257431-434, 257/678, 438/57, 438/64, 438/65, 438/66, 438/69, 438/70, 438/73, 438/75, 348294-324
• US Class Current: 250/208.1
• CPC Class Codes: H04N 23/54 Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
• CPC Class Codes: H04N 23/56 provided with illuminating means

Abstract

The present invention relates to a sensor device for sensing an image of an object, wherein a detection means (14) for detecting radiation received from the object is supported by a light-emitting semiconductor means (12) for emitting radiation towards said object during a predetermined operation period of the detection means (14). The detection means (14) can be operated even at low light intensity conditions and at a low power consumption. The detection means (14) may be a two-side illuminated detection means, wherein one side is supported by the light-emitting semiconductor means (12) and the other side is a back-etched side with increased sensitivity. A cheap and very small multi-purpose camera or sensor module can thereby be provided.

Claims

1. A sensor device for sensing an image of an object, said sensor device comprising:

a) a CMOS detector for detecting a radiation received from said object, said CMOS detector comprises a first detection surface and a second detection surface;

b) a director for directing said received radiation towards a detection surface of said CMOS detector; and

c) a light-emitting semiconductor which emits radiation toward said object during a predetermined operation period of said CMOS detector, wherein said light-emitting semiconductor is arranged to emit radiation towards an object whose image is to be detected by a predetermined one of said first and second detection surfaces, said predetermined one of said first and second detection surfaces having a lower sensitivity than the other detection surface and said first detection surface is at a front side of said CMOS detector and said second detection surface is at a back-etched rear side of said CMOS detector and wherein said front side corresponds to said predetermined one of said first and second detection surfaces.

2. A sensor device as claimed in claim 1, wherein said light-emitting semiconductor comprises at least one light-emitting diode.

3. A sensor device according to claim 1, wherein said predetermined operation time period corresponds to an integration period of said CMOS detector.

4. A sensor device for sensing an image of an object, said sensor device comprising:

a) a CMOS detector for detecting a radiation received from said object, said CMOS detector comprises a first detection surface and a second detection surface;

b) a director for directing said received radiation towards a detection surface of said CMOS detector, wherein said director comprises a first lens arrangement for directing radiation to said first detection surface and a second lens arrangement for directing radiation to said second detection surface, said first and second lens arrangement are mounted at opposite walls of a housing of said sensor device; and

c) a light-emitting semiconductor which emits radiation toward said object during a predetermined operation period of said CMOS detector, wherein said light-emitting semiconductor is arranged to emit radiation towards an object whose image is to be detected by a predetermined one of said first and second detection surfaces, said predetermined one of said first and second detection surfaces having a lower sensitivity than the other detection surface.

5. A sensor device as claimed in claim 4, wherein said light-emitting semiconductor comprises at least one light-emitting diode.

6. A sensor device according to claim 4, wherein said predetermined operation time period corresponds to an integration period of said CMOS detector.