Magnetic layer processing

• US 7,332,792 B2
• Filed: 01/28/2005
• Issued: 02/19/2008
• Est. Priority Date: 11/23/1999
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Gardner, Donald S.
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US11/046,635
• Publication Number:
  US 20050133924A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/528, 257531-533, 438/329, 438/381
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 41/042 by thin film techniques
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/32 Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer

Abstract

A dielectric layer is formed over a substrate comprising a semiconductor material. A magnetic layer is formed over the dielectric layer. The magnetic layer comprises an amorphous alloy comprising cobalt.

Claims

1. An inductor, comprising:

a first dielectric layer formed over a semiconductor substrate, the first dieledric layer patterned to form a first row having alternating pedestals and trenches;

a second dielectric layer formed over the semiconductor substrate, the second dielectric layer patterned to form a second row having alternating pedestals and trenches that is adjacent to the first row;

a first magnetic layer formed over the first row and the second row, the first magnetic layer comprising an amorphous alloy which includes cobalt;

a third dielectric layer formed over the first magnetic layer and forming an interconnect portion connecting the first row to the second row;

a conductive layer formed conformally over the third dielectric layer to form a signal path along the first row, the interconnect portion, and the second row.

2. The inductor of claim 1, further comprising a second magnetic layer formed over a fourth dielectric layer formed conformally over the conductive layer.

3. The inductor of claim 1, further comprising an underlying adhesion layer in between the conductive layer and the third dielectric layer.

4. The inductor of claim 1, further comprising an underlying barrier layer in between the conductive layer and the third dielectric layer.

5. The inductor of claim 1, wherein the alternating pedestals and trenches of the first row are displaced by approximately 180 degrees from the pedestals and trenches in the second row.

6. The inductor of claim 1, wherein the amorphous alloy which includes cobalt comprises cobalt and an element or elements selected from the group consisting of zirconium, tantalum, niobium, rhenium, neodymium, praseodymium, or dysprosium.