Cell-downgrading and reference-voltage adjustment for a multi-bit-cell flash memory

• US 7,333,364 B2
• Filed: 04/19/2007
• Issued: 02/19/2008
• Est. Priority Date: 01/06/2000
• Status: Expired due to Fees

• Current Assignee: Super Talent Technology, Corporation
• Original Assignee: Super Talent Electronics, Inc.
• Inventors: Shen, Ming-Shiang, Ma, Abraham C., Lee, Charles C., Yu, Frank
• Primary Examiner(s): Lam; David
• Application Number:
  US11/737,336
• Publication Number:
  US 20070201274A1
• Time in Patent Office: 306 Days
• Field of Search: 365/185.09, 365/185.22, 365/185.11, 365/185.33, 365/185.02, 711/103, 711/173
• US Class Current: 365/185.09
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 2211/5634 Reference cells
• CPC Class Codes: G11C 2211/5641 Multilevel memory having cells with different number of storage levels
• CPC Class Codes: G11C 29/00 Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Abstract

A flash memory has multi-level cells (MLC) that can each store multiple bits per cell. Blocks of cells can be downgraded to fewer bits/cell when errors occur, or for storing critical data such as boot code. The bits from a single MLC are partitioned among multiple pages to improve error correctability using Error Correction Code (ECC). An upper reference voltage is generated by a voltage reference generator in response to calibration registers that can be programmed to alter the upper reference voltage. A series of decreasing references are generated from the upper reference voltage and are compared to a bit-line voltage. Compare results are translated by translation logic that generates read data and over- and under-programming signals. Downgraded cells use the same truth table but generate fewer read data bits. Noise margins are asymmetrically improved by using the same sub-states for reading downgraded and full-density MLC cells.

Claims

1. A downgradable cell-density flash-memory system comprising:

a flash memory arranged as blocks of multiple pages, wherein pages are written and blocks are erased, wherein individual pages are not individually erasable except by erasing all pages in the block;

multi-level memory cells in the flash memory that each store B logical bits per cell, wherein the multi-level memory cells each store charge in one of 2^B levels to represent the B logical bits;

a bit line coupled to a selected cell in the multi-level memory cells;

a plurality of references generated from a first reference, the plurality of references being in a sequence of differing values;

a plurality of comparators that generate a plurality of compare results by comparing the bit line to the plurality of references;

translation logic that receives the compare results as inputs, and generates B read data bits for the selected cell;

a bits-per-cell indicator stored for a selected block of the multi-level memory cells, the selected block containing the selected cell, the bits-per-cell indicator indicating when the selected cell stores B logical bits, and when the selected cell stores a downgraded number D of logical bits less than B logical bits;

first downgrade logic, responsive to the bits-per-cell indicator, for blocking a least-significant of the B read data bits when the bits-per-cell indicator indicates that the selected cell stores D=B−

1 logical bits; and

second downgrade logic, responsive to the bits-per-cell indicator, for blocking a second least-significant of the B read data bits when the bits-per-cell indicator indicates that the selected cell stores D=B−

2 logical bits;

wherein B, D are whole numbers and B is at least 3;

whereby least-significant bits in the B logical bits are blocked when the selected cell is downgraded by the bits-per-cell indicator.

2. The downgradable cell-density flash-memory system of claim 1 further comprising:

Error Correction Code (ECC) bytes stored for the selected block, the ECC bytes for correcting data bytes in the selected block;

a bits-per-cell downgrader, activated when the ECC bytes are insufficient to correct errors in data bytes in the selected block, the bits-per-cell indicator reducing the downgraded number D of logical bits,

whereby bits stored per cell are reduced when errors are not correctable by the ECC bytes.

3. The downgradable cell-density flash-memory system of claim 2 wherein the bits-per-cell indicator and the ECC bytes are stored in a spare area of the selected block.

4. The downgradable cell-density flash-memory system of claim 2 further comprising:

a calibration register for storing a calibration value that is updatable;

a voltage reference generator that generates the first reference in response to the calibration value from the calibration register;

a data recovery unit, activated when the ECC bytes are insufficient to correct errors in data bytes in the selected block, for adjusting the calibration value in the calibration register and to re-read the selected cell using adjusted values for the plurality of references,

whereby data recovery is attemptable by adjusting the plurality of references.

5. The downgradable cell-density flash-memory system of claim 1 wherein the plurality of references comprises 2^B pairs of target references;

wherein the translation logic generates a different value of the B read data bits for each of the 2^B pairs of target references;

wherein the plurality of references further comprises 2^B−

1 segment references;

wherein the selected cell is programmed until the bit line is between a selected one of the pairs of target references that is determined by B write data bits.

6. The downgradable cell-density flash-memory system of claim 5 further comprising:

an in-range signal generated by the translation logic when the bit line is between a pair of target references in the plurality of references;

an over signal generated by the translation logic when the bit line is above the pair of target references but not over a next segment reference; and

an under signal generated by the translation logic when the bit line is below the pair of target references but not below a prior segment reference.

7. The downgradable cell-density flash-memory system of claim 6 wherein downgraded multi-level memory cells have asymmetric noise margins, wherein an upper voltage difference from an upper voltage of the target pair to an upper segment reference at a transition to a prior logic value of the downgraded number D of logical bits is not equal to a lower difference from a lower voltage of the target pair to a lower segment reference at a transition to a next logic value of the downgraded number D of logical bits,

whereby asymmetric noise margins occur when the multi-level memory cells are downgraded.

8. The downgradable cell-density flash-memory system of claim 2 further comprising:

third downgrade logic, responsive to the bits-per-cell indicator, for blocking a third least-significant of the B read data bits when the bits-per-cell indicator indicates that the selected cell stores D=B−

3 logical bits.

9. The downgradable cell-density flash-memory system of claim 8 wherein critical code is stored in blocks having the bits-per-cell indicator set to D=1 bit stored per multi-level memory cells,

whereby critical code is stored at lowest cell density.

10. A method for downgrading multi-level memory cells in a flash memory comprising:

reading a bits-per-cell indicator for a block of the multi-level memory cells to determine a number of logical bits stored in each of the multi-level memory cells;

reading data from the multi-level memory cells by comparing a bit-line voltage driven by a selected cell in the multi-level memory cells to a plurality of reference voltage levels;

determining when an error occurs while reading the data from the multi-level memory cells;

relocating data in the block to a new block when the error occurs;

when the bits-per-cell indicator for the block is at a minimum density of 1 bit per cell and the error is detected, marking the block as a bad block after the data in the block is relocated;

reducing a value of the bits-per-cell indicator for the block to generated a downgraded value when the error is detected and the data in the block is relocated;

writing the downgraded value to the bits-per-cell indicator for the block; and

writing new data to the block wherein a number of logical bits stored in each of the multi-level memory cells in the block is the downgraded value;

whereby the block is downgraded to the downgraded value of logical bits per cell when the error occurs.

11. The method of claim 10 wherein determining when the error occurs comprises:

reading Error Correction Code ECC bytes from the block and reading data bytes from the block;

generating an error-check result from the ECC bytes and from the data bytes;

determining a number of errors in the data bytes using the error-check result;

comparing the number of errors to an ECC limit;

correcting data errors in the data bytes using the ECC bytes when the number of errors is less than the ECC limit and not reporting the error;

reporting the error when the number of errors is more than the ECC limit,

whereby the error is reported when the number of errors exceeds the ECC limit.

12. The method of claim 11 further comprising:

recovering the data bytes as recovered data bytes when the number of errors is more than the ECC limit;

relocating the recovered data bytes to the new block; and

reporting the error when the recovered data bytes are relocated.

13. The method of claim 12 wherein recovering the data bytes comprises:

writing an adjusted value to a calibration register;

adjusting a first reference voltage generated by a voltage reference generator in response to the adjusted value in the calibration register;

adjusting the plurality of reference voltage levels, wherein the plurality of reference voltage level is generated from the first reference voltage in response to the adjusted value;

applying the plurality of reference voltage levels to a series of comparators that also receive the bit-line voltage that is driven by the selected cell in the multi-level memory cells; and

decoding compare results from the series of comparators to generate the recovered data bytes,

whereby recovered data is read after adjusting the plurality of reference voltage levels.

14. The method of claim 13 wherein adjusting the first reference voltage comprises increasing the first reference voltage and decreasing the first reference voltage.

15. The method of claim 14 wherein adjusting the first reference voltage comprises successively increasing the first reference voltage and successively decreasing the first reference voltage until the number of errors is below the ECC limit.

16. The method of claim 10 wherein reducing the value of the bits-per-cell indicator for the block to generated the downgraded value when the error is detected and the data in the block is relocated comprises:

reducing the value of 4 bits per cell to the downgraded value of 3 bits per cell when 4 logical bits are stored per cell;

reducing the value of 3 bits per cell to the downgraded value of 2 bits per cell when 3 logical bits are stored per cell; and

reducing the value of 2 bits per cell to the downgraded value of 1 bits per cell when 2 logical bits are stored per cell.

17. A downgradable flash memory with multi-level memory cells comprising:

multi-level-cell (MLC) flash memory means for storing multiple bits of data per multi-level memory cell, arranged as blocks of multiple pages, wherein pages are written and blocks are erased, wherein individual pages are not individually erasable except by erasing all pages in the block;

bits-per-cell indicator means for indicating a number of logical bits stored in each of the multi-level memory cells in the block;

voltage compare means for comparing a bit-line voltage driven by a selected cell in the multi-level memory cells to a plurality of reference voltage levels to generate compare results;

error detect means for determining when an error occurs while reading the data from the multi-level memory cells;

relocate means for relocating data in the block to a new block when the error occurs;

bad block means for marking the block as a bad block after the data in the block is relocated when the bits-per-cell indicator means for the block is at a minimum density of 1 bit per cell and the error is detected,

cell downgrade means for reducing a value of the bits-per-cell indicator means for the block to generated a downgraded value when the error is detected and the data in the block is relocated;

reduced cell-density write means for writing new data to the block wherein a number of logical bits stored in each of the multi-level memory cells in the block is the downgraded value;

whereby the block is downgraded to the downgraded value of logical bits per cell when the error occurs.

18. The downgradable flash memory of claim 17 wherein the error detect means further comprises:

read means for reading Error Correction Code ECC bytes from the block and reading data bytes from the block;

check generator means for generating an error-check result from the ECC bytes and from the data bytes;

error count means for determining a number of errors in the data bytes using the error-check result;

limit compare means for comparing the number of errors to an ECC limit;

correction means for correcting data errors in the data bytes using the ECC bytes when the number of errors is less than the ECC limit and not reporting the error;

report mans for reporting the error when the number of errors is more than the ECC limit,

whereby the error is reported when the number of errors exceeds the ECC limit.

19. The downgradable flash memory of claim 18 further comprising:

recovery means for recovering the data bytes as recovered data bytes when the number of errors is more than the ECC limit;

recovered relocate means for relocating the recovered data bytes to the new block; and

report means is also for reporting the error when the recovered data bytes are relocated.

20. The downgradable flash memory of claim 19 wherein the recovery means further comprises:

calibration register means for storing an adjusted value;

voltage reference generator means for generating an adjusted first reference voltage in response to the adjusted value in the calibration register means;

levels means for adjusting the plurality of reference voltage levels, wherein the plurality of reference voltage level is generated from the adjusted first reference voltage in response to the adjusted value;

translation logic means for decoding compare results from the series of comparators to generate the recovered data bytes,

whereby recovered data is read after adjusting the plurality of reference voltage levels.