Apparatus for controlling flow rate of gases used in semiconductor device by differential pressure

• US 7,334,602 B2
• Filed: 06/24/2004
• Issued: 02/26/2008
• Est. Priority Date: 06/27/2003
• Status: Expired due to Fees

• Current Assignee: Hyundai Calibration & Certification Technologies Co., Ltd., Kang-Ho Ahn
• Original Assignee: Hyundai Calibration & Certification Technologies Co., Ltd., Kang-Ho Ahn
• Inventors: Ahn, Kang-Ho
• Primary Examiner(s): Krishnamurthy; Ramesh
• Application Number:
  US10/562,158
• Publication Number:
  US 20060151113A1
• Time in Patent Office: 1,342 Days
• Field of Search: 137/486, 137/487.5, 138 40- 46, 738/615.2, 738/616.1, 738/616.2
• US Class Current: 137/487.5
• CPC Class Codes: G05D 7/0635 by action on throttling means G05D7/0688, G05D7/0694 take precedence
• CPC Class Codes: Y10T 137/7722 Line condition change responsive valves
• CPC Class Codes: Y10T 137/7759 Responsive to change in rate of fluid flow
• CPC Class Codes: Y10T 137/7761 Electrically actuated valve
• CPC Class Codes: Y10T 137/8326 Fluid pressure responsive indicator, recorder or alarm

Abstract

Provided is apparatus for controlling flow rate of gases used in semiconductor device by differential pressure by generating differential pressure in a fluid path. A differential pressure generation element generates pressure difference in the fluid path of gases used in semiconductor device fabrication, a pressure, sensor which is installed at a bypass of the fluid path detects the pressure difference, and a central processing unit (CPU) measures and controls a flow rate of the gases, thereby the present invention is capable of controlling the flow rate precisely and rapidly, and enhancing the degree of purity of the gases by the filtering function of the differential pressure generation element itself.

Claims

1. An apparatus for controlling flow rate of gases used in semiconductor device fabrication by differential pressure, comprising:

a body having a flow passage for the gas used in the semiconductor device fabrication;

a control valve for controlling a flow of the gas by opening or closing the flow passage of the body;

a differential pressure generation element installed in the flow passage of the body to generate differential pressure;

a tube installed to penetrate through the differential pressure generation element;

a pressure sensor received in the tube to detect the differential pressure in the flow passage generated by the differential pressure generation element; and

a central processing unit for calculating the flow rate of the gas according to a detection signal input from the pressure sensor and controlling the control valve.

2. The apparatus as claimed in claim 1, wherein the differential pressure generation element comprises a porous material.

3. The apparatus as claimed in claim 2, wherein the tube is installed to penetrate through the center of the porous material.

4. The apparatus as claimed in claim 1, wherein the differential pressure generation element comprises a porous material having a first vertical plate portion vertically abutting on a lower wall surface of the flow passage, a horizontal plate portion horizontally extending from a downstream end of the first vertical plate portion, and a second vertical plate portion vertically extending from a downstream end of the horizontal plate portion and abutting on an upper wall surface of the flow passage.

5. The apparatus as claimed in claim 4, wherein the tube is installed at the horizontal plate portion of the porous material to penetrate therethrough perpendicularly to a flow direction of the gas, and the pressure sensor is horizontally received in the tube.

6. The apparatus as claimed in claim 1, wherein the differential pressure generation element comprises a plurality of capillary tubes installed along a flow direction of the gas.