Methods of nanotube films and articles

• US 7,335,528 B2
• Filed: 12/08/2004
• Issued: 02/26/2008
• Est. Priority Date: 07/25/2001
• Status: Expired due to Term

• Current Assignee: ZEON Corporation
• Original Assignee: Nantero Incorporated
• Inventors: Segal, Brent M., Rueckes, Thomas
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US11/007,752
• Publication Number:
  US 20070141746A1
• Time in Patent Office: 1,175 Days
• Field of Search: 438/99, 977/DIG.1, 977/742, 977/750, 977/752, 977/843, 977/842, 427/249.1, 427/227, 427/592, 257/E51.04, 423/447.3
• US Class Current: 438/99
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/16 Memory cell being a nanotube, e.g. suspended nanotube
• CPC Class Codes: G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• CPC Class Codes: G11C 2213/81 Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01H 1/0094 Switches making use of nanoelectromechanical systems [NEMS]
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/413 Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B
• CPC Class Codes: H10B 99/10 Memory cells having a cross-point geometry
• CPC Class Codes: H10K 30/821 comprising carbon nanotubes
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: Y10S 977/75 Single-walled
• CPC Class Codes: Y10S 977/778 within specified host or matrix material, e.g. nanocomposite films
• CPC Class Codes: Y10S 977/843 Gas phase catalytic growth, i.e. chemical vapor deposition
• CPC Class Codes: Y10S 977/857 including coating
• CPC Class Codes: Y10S 977/888 Shaping or removal of materials, e.g. etching

Abstract

Nanotube films and articles and methods of making the same. A conductive article includes an aggregate of nanotube segments which contact other nanotube segments to define a plurality of conductive pathways along the article. Segments may have different lengths and may be shorter than the article. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining within the fabric a pattern corresponding to the conductive article. The nanotube fabric may be grown on the substrate using a catalyst, such as a gas phase a metallic gas phase catalyst. The nanotube fabric may be formed by depositing a solution of suspended nanotubes on the substrate, which may be spun to create a spin-coating of the solution. The solution may be deposited by dipping the substrate into the solution. The nanotube fabric may be formed by spraying an aerosol having nanotubes onto the substrate.

Claims

1. A method of making a non-woven film of conductive nanotubes, the method comprising providing a substrate having a substantially planar top surface defining a major surface of the substrate, the major surface of the substrate comprising a patterned array of conductive elements, introducing a vapor-phase catalyst to foster growth of nanotubes, and introducing a carbon source to grow a layer of nanotubes that are disposed on and substantially parallel to the major surface of the substrate.

2. The method of claim 1 wherein the vapor-phase catalyst is a metallocene.

3. The method of claim 1 wherein the nanotubes include single-walled carbon nanotubes.

4. The method of claim 1 wherein the nanotubes include multi-walled carbon nanotubes.

5. The method of claim 1, wherein the major surface of the substrate further comprises an ordered array of insulative elements.

6. The method of claim 1, wherein the major surface of the substrate further comprises an ordered array of sacrificial material.

7. The method of claim 6, further comprising removing the sacrificial material after introducing the carbon source.

8. The method of claim 1, wherein the conductive elements are substantially parallel to one another.

9. A method of making conductive articles, comprising:

providing a substrate, the substrate including a patterned array of conductive elements;

providing a patterned layer of material;

providing a catalyst that fosters growth of nanotubes;

providing a carbon source, so as to grow randomly oriented nanotubes substantially parallel to a major surface of the substrate in regions defined by the pattern and over the patterned array of conductive elements.

10. The method of claim 9 wherein the carbon source and the catalyst are introduced in a single act.

11. The method of claim 9 wherein the carbon source and the catalyst are introduced as separate acts.

12. The method of claim 9 wherein the patterned layer of material is an insulator or a semiconductor and wherein the nanotubes grow over the patterned material.

13. The method of claim 9 wherein the patterned layer is a patterned metal layer and wherein the nanotubes grow in areas other than the patterned metal layer.

14. The method of claim 9, wherein the substrate further comprises an ordered array of insulative elements.

15. The method of claim 9, wherein the substrate further comprises an ordered array of sacrificial material.

16. The method of claim 15, further comprising removing the sacrificial material after introducing the carbon source.

17. The method of claim 9, wherein the conductive elements are substantially parallel to one another.