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System and method for fabricating logic devices comprising carbon nanotube transistors

  • US 7,335,603 B2
  • Filed: 02/07/2001
  • Issued: 02/26/2008
  • Est. Priority Date: 02/07/2000
  • Status: Expired due to Fees
First Claim
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1. A device comprising:

  • a horizontally oriented substrate having;

    a silicon layer containing at least one nano-sized diameter silicon pore,a patterned conductive layer,wherein at least one carbon nanotube is fabricated within the silicon pore,wherein the at least one carbon nanotube is electrically coupled to the patterned conductive layer; and

    wherein substantially all of the carbon nanotubes are vertically oriented.

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