MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture

• US 7,335,960 B2
• Filed: 07/12/2005
• Issued: 02/26/2008
• Est. Priority Date: 12/10/2003
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Han, Cherng-Chyi, Hong, Liubo
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US11/179,252
• Publication Number:
  US 20050248980A1
• Time in Patent Office: 959 Days
• Field of Search: 257/421
• US Class Current: 257/421
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise and well controlled. The method includes the formation of an MTJ film stack over which is formed both a capping and sacrificial layer. The stack is patterned by conventional means, then is covered by a layer of insulation which is thinned by CMP to expose a remaining portion of the sacrificial layer. The remaining portion of the sacrificial layer can be precisely removed by an etching process, leaving only the well dimensioned capping layer to separate the bit line from the magnetic free layer and the capping layer. The bit line and an intervening layer of insulation separate the free layer from a word line in an equally precise and controlled manner.

Claims

1. An MRAM cell structure in which the overall topography is flat and in which the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a bit line and a word line and a magnetic free layer is well controlled, comprising:

a substrate;

a magnetic tunneling junction (MTJ) formed on the substrate, said MTJ including a magnetic free layer;

a capping layer formed on said MTJ, the vertical separation between an upper surface of said capping layer and an upper surface of said free layer being the thickness of said capping layer and said thickness being precisely defined and well controlled;

a first layer of insulation formed surrounding said MTJ, the upper surface of said insulation layer and the upper surface of said capping layer being rendered substantially coplanar and forming a common surface having a flat topography and the thickness of said capping layer being unchanged during said rendering as a result of a protective sacrificial layer that is completely removed;

a bit line formed on said common surface and extending across said capping layer, wherein the vertical separation between said bit line and said magnetic free layer is well controlled to within +/−

1% of said vertical separation;

a second layer of insulation formed surrounding said bit line, an upper surface of said second layer being substantially co-planar with an upper surface of said bit line.

2. The MRAM cell structure of claim 1 further including:

a third layer of insulation of well controlled thickness formed on said upper surface of said second layer of insulation and disposed over said bit line; and

a word line formed over said third layer of insulation, the word line being thereby insulated from the bit line and the vertical separation between said word line and said free layer being thereby well controlled to within +/−

1% of said separation.

3. The MRAM cell structure of claim 1 wherein said substrate is a bottom conducting electrode.

4. The MRAM cell structure of claim 1 wherein said MTJ junction further comprises:

a seed layer formed on said substrate;

an antiferromagnetic pinning layer formed on said seed layer;

a ferromagnetic pinned layer formed on said pinning layer;

a tunneling barrier layer formed on said pinned layer;

a ferromagnetic free layer formed on said barrier layer.

5. The MRAM cell structure of claim 1 wherein the material of said capping layer is Ru, Cu or Ta formed to a thickness between approximately 20 and 250 angstroms.

6. The MRAM of claim 1 wherein said vertical separation between said bit line and said free layer is controlled to within +/−

1% of said vertical separation by the formation of said capping layer.

7. The MRAM of claim 2 wherein said vertical separation between said word line and said free layer is controlled to within +/−

1% of said vertical separation by the formation of said capping layer, said second insulation layer and said bit line.

8. An array of MRAM cells, wherein accessing bit lines and word lines are advantageously formed over a flat topography and maintain a well controlled distance to a magnetic free layer in each of said MRAM cells, comprising:

a plurality of MRAM cells uniformly disposed in a regular two-dimensional array of uniformly spaced cells formed in parallel linear ranks, each cell including a free layer and each cell being capped by a capping layer of well controlled thickness;

an array of parallel bit lines formed in a first direction over said MRAM cells, wherein one bit line is formed over each rank of cells; and

wherein

the overall topography of each cell is flat and the vertical separation between each bit line and a magnetic free layer within the cell vertically below said bit line is well controlled to within +/−

1% of said vertical separation by the formation of said capping layer.

9. The array of claim 8 further comprising:

layer of insulation formed over said array of parallel bit lines, said layer being of uniform and well controlled thickness; and

a parallel array of word lines formed transversely to said first direction over said layer of insulation, said array of word lines being thereby vertically separated from said array of bit lines and crossing transversely over said bit lines and whereby each word line in said array is formed over a rank of MRAM cells and is vertically separated from said cells and whereby

the vertical separation between each word line and the magnetic free layer in a cell directly below said word line is controlled to within +/−

1% of said vertical separation by the formation of the capping layer.