Physical quantity sensor having multiple through holes
First Claim
1. A semiconductor physical quantity sensor comprising:
- a substrate having oxide film;
a semiconductor layer supported on the substrate;
the substrate with the oxide film and semiconductor layer forming a silicon-on-insulator structure;
trenches disposed in the semiconductor layer; and
a movable portion disposed in the semiconductor layer and separated from the oxide film of the substrate by the trenches, the trenches being disposed at an outer periphery of the movable portion,wherein;
the movable portion faces the oxide film of the substrate,the movable portion includes through-holes, each of which penetrates the semiconductor layer in a thickness direction,the movable portion is displaceable on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion, andone of the through-holes in the movable portion or one of the trenches disposed at the outer periphery of the movable portion has a width permitting a maximum etching rate of an area of the semiconductor layer adjacent thereto.
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Accused Products
Abstract
A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.
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Citations
12 Claims
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1. A semiconductor physical quantity sensor comprising:
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a substrate having oxide film; a semiconductor layer supported on the substrate;
the substrate with the oxide film and semiconductor layer forming a silicon-on-insulator structure;trenches disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the oxide film of the substrate by the trenches, the trenches being disposed at an outer periphery of the movable portion, wherein; the movable portion faces the oxide film of the substrate, the movable portion includes through-holes, each of which penetrates the semiconductor layer in a thickness direction, the movable portion is displaceable on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion, and one of the through-holes in the movable portion or one of the trenches disposed at the outer periphery of the movable portion has a width permitting a maximum etching rate of an area of the semiconductor layer adjacent thereto. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor physical quantity sensor comprising:
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a substrate; and a semiconductor layer supported by the substrate, the semiconductor layer having a movable portion separated from the substrate by a first trench and a second trench, wherein; the movable portion includes through-holes penetrating the semiconductor layer in a thickness direction, the movable portion moving relative to the substrate when a physical quantity is applied to the movable portion, the physical quantity being detected by a movement of the movable portion, and one of the through-holes in the movable portion has a width permitting a maximum etching rate of the semiconductor layer. - View Dependent Claims (8, 9)
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10. A semiconductor physical quantity sensor comprising:
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a substrate having an oxide film; a semiconductor layer supported by the substrate through the oxide film, whereby the semiconductor layer provides a silicon-on-insulator structure; a first trench provided in the semiconductor layer; a second trench provided in the semiconductor layer; and a movable portion partitioned by the first trench and the second trench, and separated from the oxide film of the substrate, wherein; the movable portion faces the oxide film of the substrate, the movable portion has a first through-hole penetrating the semiconductor layer in a thickness direction, the movable portion is displaceable on the basis of a physical quantity applied to the movable portion, whereby the physical quantity is detected by a displacement of the movable portion, and the first trench has a first width permitting an etching rate lower than that of the first through-hole, and the second trench has a second width permitting an etching rate lower than that of the first through-hole. - View Dependent Claims (11, 12)
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Specification