Solar cell and method of manufacture

• US 7,339,110 B1
• Filed: 04/10/2003
• Issued: 03/04/2008
• Est. Priority Date: 04/10/2003
• Status: Active Grant

• Current Assignee: Maxeon Solar Pte Limited
• Original Assignee: Sunpower Corporation (Totalenergies Se)
• Inventors: Smith, David, McIntosh, Keith, Pass, Thomas, Mulligan, William P., Kaminar, Neil, Swanson, Richard M., Cudzinovic, Michael J.
• Primary Examiner(s): Nguyen; Nam
• Assistant Examiner(s): BARTON, JEFFREY THOMAS
• Application Number:
  US10/412,638
• Time in Patent Office: 1,790 Days
• Field of Search: 136243-265, 205/170, 205182-184
• US Class Current: 136/256
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/0682 back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer in offset levels through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an antireflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.

Claims

1. A solar cell comprising:

a) a silicon substrate having a front surface and a back surface,

b) a plurality of first doped regions of first conductivity type in the back surface and a plurality of second doped regions of second conductivity type in the back surface, and

c) a first plurality of metal contacts ohmically contacting the first doped regions at a first plurality of contact points and a second plurality of metal contacts ohmically contacting the second doped layers at a second plurality of contact points, wherein the first and second pluralities of metal contacts each comprise a thin seed layer contacting the silicon substrate and an electrically conductive layer over the seed layer which is thicker than the seed layer and wherein the seed layer comprises three layers including,

a first layer that contacts the silicon and serves as an infrared reflector, the first layer comprising aluminum,

a barrier layer that covers the first layer, and

a layer that covers the barrier layer that serves to initiate plating.

2. The solar cell as defined by claim 1, wherein the front surface is textured to facilitate the capture of impinging photons.

3. The solar cell as defined by claim 2, and further including an antireflection coating over the textured front surface.

4. The solar cell as defined by claim 3, wherein the antireflection coating comprises a nitride.

5. The solar cell as defined by claim 4, wherein the antireflection coating comprises silicon nitride.

6. The solar cell as defined by claim 3, wherein the antireflection coating comprises titanium oxide.

7. The solar cell as defined by claim 3, wherein the substrate comprises monocrystalline silicon.

8. The solar cell as defined by claim 7, wherein the monocrystalline silicon has a (100) lattice structure on the front surface.

9. The solar cell as defined by claim 3, wherein the substrate comprises polycrystalline silicon with a minority carrier lifetime greater than 200 microseconds.

10. The solar cell as defined by claim 3, wherein the substrate is doped n-type with a resistivity range of 1-20 ohm-cm.

11. The solar cell as defined by claim 1 wherein the plurality of first doped regions are in first offset layers and the plurality of second doped regions are in second offset layers on the back surface.

12. A solar cell comprising:

a) a silicon substrate having a front surface and a back surface,

b) a plurality of first doped regions of first conductivity type in the back surface and a plurality of second doped regions of second conductivity type in the back surface, and

c) a first plurality of metal contacts ohmically contacting the first doped regions at a first plurality of contact points and a second plurality of metal contacts ohmically contacting the second doped layers at a second plurality of contact points, wherein the first and second pluralities of metal contacts each comprise a thin seed layer contacting the silicon substrate and an electrically conductive layer over the seed layer which is thicker than the seed layer and wherein the seed layer is a 2-layer stack comprising;

a first layer that contacts the silicon serves as an infrared reflector, the first layer comprising aluminum, and

a barrier layer that covers the first layer and also serves to initiate plating.

13. A solar cell comprising:

a) a silicon substrate having a front surface and a back surface,

b) a plurality of first doped regions of first conductivity type in the back surface and a plurality of second doped regions of second conductivity type in the back surface,

c) a thermal oxide layer formed on back portions of the first doped regions and on back portions of the second doped regions, the oxide layer having a plurality of contact openings that expose selected back portions of the first and second doped regions defining a plurality of contact points, and

d) a first plurality of metal contacts ohmically contacting the first doped regions through said contact openings at a first plurality of contact points and a second plurality of metal contacts ohmically contacting the second doped layers through said contact openings at a second plurality of contact points,

e) the first and second pluralities of metal contacts each comprising a three layer contact surface that includes,

an aluminum layer that contacts the oxide layer and contacts the exposed back portions of the first and second doped regions, wherein the interface of the aluminum layer and the oxide layer serves as an infrared reflector,

a copper diffusion barrier layer that covers the aluminum layer, and

a copper plating initiation layer that covers the barrier layer.

14. The solar cell of claim 13 wherein a bulk copper layer is formed over the plating initiation layer to provide a set of interdigitated copper contacts.

15. The solar cell as defined by claim 13, wherein the front surface is textured such that the interaction between the textured front surface and the back infrared reflective interface operate to increase the optical path length for infrared photons incident on the cell.

16. The solar cell as defined by claim 15, and further including an antireflection coating over the textured front surface.