Semiconductor device and method for fabricating the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a porous low-dielectric-constant film formed on a substrate and having an opening; and
a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening, whereinthe fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.
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Abstract
A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening. The fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.
12 Citations
6 Claims
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1. A semiconductor device comprising:
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a porous low-dielectric-constant film formed on a substrate and having an opening; and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening, wherein the fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating a semiconductor device, the method comprising the steps of:
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(a) forming a porous low-dielectric-constant film on a substrate; (b) forming an opening in the porous low-dielectric-constant film; and (c) coating a solution containing a plurality of fine particles each having a diameter of not less than 1 nm and not more than 2 nm on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening and removing a solvent of the solution therefrom to form a fine particle film composed of the plurality of aggregately deposited fine particles.
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Specification